SiOx mediated epitaxial ternary silicide (Co1-xNix) Si2

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Yong-Zhao Han
  • Bing-Zong Li
  • Guo-Ping Ru
  • Xin-Ping Qu
  • Yong-Feng Cao
  • Bei-Lei Xu
  • Yu-Long Jiang
  • Lian-Wei Wang
  • Rong-Yao Zhang

Detail(s)

Original languageEnglish
Pages (from-to)1269-1273
Journal / PublicationPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume22
Issue number10
Publication statusPublished - Oct 2001
Externally publishedYes

Abstract

A ternary epitaxial (Co1-xNix)Si2 thin film was grown by the solid state reaction of Co/Ni/SiOx/Si(100) system and characterized by various techniques, such as XRD, RBS and four-point probe. The results show that the oxide interlayer can act as a diffusion barrier. The (Co1-xNix)Si2 film formed from Co/Ni/SiOx/Si(100) system has the crystal orientation parallel to the substrate. In contrast, the film formed from Co/Ni/Si(100) system is polycrystalline, without any epitaxial relation with the substrate. The lattice constant of the ternary (Co1-xNix)Si2 film is between that of CoSi2 and NiSi2 so that the strain in a silicide film is lowered. The present film is about 110 nm in thickness and its minimum channel yield is 22%. The resistance of the epitaxial film is about 17 μΩ·cm, with the thermal stability as high as 1000°C. Thus, the epitaxial film is comparable with a high quality CoSi2 film.

Research Area(s)

  • Epitaxy, Solid state reaction, Ternary silicide

Citation Format(s)

SiOx mediated epitaxial ternary silicide (Co1-xNix) Si2. / Han, Yong-Zhao; Li, Bing-Zong; Ru, Guo-Ping; Qu, Xin-Ping; Cao, Yong-Feng; Xu, Bei-Lei; Jiang, Yu-Long; Wang, Lian-Wei; Zhang, Rong-Yao; Chu, P. K.

In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 22, No. 10, 10.2001, p. 1269-1273.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review