SiOx 调制的三元硅化物 (Co1-xNix) Si2 外延

韩永召; 李炳宗; 茹国平; 屈新萍; 曹永峰; 徐蓓蕾; 蒋玉龙; 王连卫; 张荣耀; Paul Kim Ho 朱剑豪

SiO_x 调制的三元硅化物 (Co_1-xNi_x) Si₂外延

Translated title of the contribution: SiO_x mediated epitaxial ternary silicide (Co_1-xNi_x) Si₂

韩永召
, 李炳宗
, 茹国平
, 屈新萍
, 曹永峰
, 徐蓓蕾
, 蒋玉龙
, 王连卫
, 张荣耀
, 朱剑豪

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

A ternary epitaxial (Co_1-xNi_x) Si₂ thin film was grown by the solid state reaction of Co/Ni/SiO_x/Si(100) system and characterized by various techniques, such as XRD, RBS and four-point probe. The results show that the oxide interlayer can act as a diffusion barrier. The (Co_1-xNi_x)Si₂ film formed from Co/Ni/SiO_x/Si(100) system has the crystal orientation parallel to the substrate. In contrast, the film formed from Co/Ni/Si(100) system is polycrystalline, without any epitaxial relation with the substrate. The lattice constant of the ternary (Co_1-xNi_x)Si₂ film is between that of CoSi₂ and NiSi₂ so that the strain in a silicide film is lowered. The present film is about 110 nm in thickness and its minimum channel yield (X_min) is 22%. The resistance of the epitaxial film is about 17 μΩ·cm, with the thermal stability as high as 1000°C. Thus, the epitaxial film is comparable with a high quality CoSi₂ film.

Translated title of the contribution	SiO_x mediated epitaxial ternary silicide (Co_1-xNi_x) Si₂
Original language	Chinese (Simplified)
Pages (from-to)	1269-1273
Journal	半导体学报
Volume	22
Issue number	10
Publication status	Published - Oct 2001

Research Keywords

三元硅化物
外延
固相反应
Ternary silicide
Solid state reaction
Epitaxy

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@article{82a634217a284dc3959d9ad74463ca16,

title = "SiOx 调制的三元硅化物 (Co1-xNix) Si2 外延",

abstract = "报道了通过 Co/Ni/SiOx/Si(100) 体系固相反应 ,实现三元硅化物 (Co1-xNix) Si2 薄膜外延生长及薄膜特性的表征. 测试结果表明, 中间氧化硅层对原子扩散起到阻挡作用. XRD和 RBS图谱显示, 有中间层的样品所形成的硅化物膜和硅衬底有良好的外延关系. 而 Co/Ni/Si(100) 体系, 则形成多晶硅化物膜, 和硅衬底没有外延关系 .外延三元硅化物 (Co1- xNix) Si2 膜的晶格常数介于 CoSi2 和 NiSi2 之间, 从而可以降低生成膜的应力. 薄膜的厚度约为 110 nm; 最小沟道产额 (χmin) 为 22\% .外延三元硅化物膜的电阻率约为 17μΩ· cm; 高温稳定性达 1000 °C, 与 CoSi2 膜相当.",

keywords = "三元硅化物, 外延, 固相反应, Ternary silicide, Solid state reaction, Epitaxy",

author = "韩永召 and 李炳宗 and 茹国平 and 屈新萍 and 曹永峰 and 徐蓓蕾 and 蒋玉龙 and 王连卫 and 张荣耀 and 朱剑豪",

year = "2001",

month = oct,

language = "繁体中文",

volume = "22",

pages = "1269--1273",

journal = "半导体学报",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "10",

}

TY - JOUR

T1 - SiOx 调制的三元硅化物 (Co1-xNix) Si2 外延

AU - 韩永召, null

AU - 李炳宗, null

AU - 茹国平, null

AU - 屈新萍, null

AU - 曹永峰, null

AU - 徐蓓蕾 , null

AU - 蒋玉龙, null

AU - 王连卫, null

AU - 张荣耀, null

AU - 朱剑豪, null

PY - 2001/10

Y1 - 2001/10

N2 - 报道了通过 Co/Ni/SiOx/Si(100) 体系固相反应 ,实现三元硅化物 (Co1-xNix) Si2 薄膜外延生长及薄膜特性的表征. 测试结果表明, 中间氧化硅层对原子扩散起到阻挡作用. XRD和 RBS图谱显示, 有中间层的样品所形成的硅化物膜和硅衬底有良好的外延关系. 而 Co/Ni/Si(100) 体系, 则形成多晶硅化物膜, 和硅衬底没有外延关系 .外延三元硅化物 (Co1- xNix) Si2 膜的晶格常数介于 CoSi2 和 NiSi2 之间, 从而可以降低生成膜的应力. 薄膜的厚度约为 110 nm; 最小沟道产额 (χmin) 为 22% .外延三元硅化物膜的电阻率约为 17μΩ· cm; 高温稳定性达 1000 °C, 与 CoSi2 膜相当.

AB - 报道了通过 Co/Ni/SiOx/Si(100) 体系固相反应 ,实现三元硅化物 (Co1-xNix) Si2 薄膜外延生长及薄膜特性的表征. 测试结果表明, 中间氧化硅层对原子扩散起到阻挡作用. XRD和 RBS图谱显示, 有中间层的样品所形成的硅化物膜和硅衬底有良好的外延关系. 而 Co/Ni/Si(100) 体系, 则形成多晶硅化物膜, 和硅衬底没有外延关系 .外延三元硅化物 (Co1- xNix) Si2 膜的晶格常数介于 CoSi2 和 NiSi2 之间, 从而可以降低生成膜的应力. 薄膜的厚度约为 110 nm; 最小沟道产额 (χmin) 为 22% .外延三元硅化物膜的电阻率约为 17μΩ· cm; 高温稳定性达 1000 °C, 与 CoSi2 膜相当.

KW - 三元硅化物

KW - 外延

KW - 固相反应

KW - Ternary silicide

KW - Solid state reaction

KW - Epitaxy

UR - https://www.scopus.com/pages/publications/0035494840

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0035494840&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0253-4177

VL - 22

SP - 1269

EP - 1273

JO - 半导体学报

JF - 半导体学报

IS - 10

ER -