Single-ZnO-Nanowire Memory

Yen-De Chiang; Wen-Yuan Chang; Ching-Yuan Ho; Cheng-Ying Chen; Chih-Hsiang Ho; Su-Jien Lin; Tai-Bor Wu; Jr-Hau He

doi:10.1109/TED.2011.2121914

Author(s)

Yen-De Chiang
Wen-Yuan Chang
Ching-Yuan Ho
Cheng-Ying Chen
Chih-Hsiang Ho
Su-Jien Lin
Tai-Bor Wu

Detail(s)

Original language	English
Article number	5741715
Pages (from-to)	1735-1740
Journal / Publication	IEEE Transactions on Electron Devices
Volume	58
Issue number	6
Online published	5 Apr 2011
Publication status	Published - Jun 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/TED.2011.2121914 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-79957663921&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(b2789526-a10d-4948-9d63-f5fbff7c10b5).html

Abstract

Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10⁵. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Research Area(s)

Nanowire (NW), resistance random access memory (ReRAM), resistive switching, space-charge-limited (SCL) conduction, ZnO

Citation Format(s)

[ RIS ] [ BibTeX ]

Single-ZnO-Nanowire Memory. / Chiang, Yen-De; Chang, Wen-Yuan; Ho, Ching-Yuan et al.
In: IEEE Transactions on Electron Devices, Vol. 58, No. 6, 5741715, 06.2011, p. 1735-1740.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Chiang, Y-D, Chang, W-Y, Ho, C-Y, Chen, C-Y, Ho, C-H, Lin, S-J, Wu, T-B & He, J-H 2011, 'Single-ZnO-Nanowire Memory', IEEE Transactions on Electron Devices, vol. 58, no. 6, 5741715, pp. 1735-1740. https://doi.org/10.1109/TED.2011.2121914

Chiang, Y.-D., Chang, W.-Y., Ho, C.-Y., Chen, C.-Y., Ho, C.-H., Lin, S.-J., Wu, T.-B., & He, J.-H. (2011). Single-ZnO-Nanowire Memory. IEEE Transactions on Electron Devices, 58(6), 1735-1740. Article 5741715. https://doi.org/10.1109/TED.2011.2121914

Chiang YD, Chang WY, Ho CY, Chen CY, Ho CH, Lin SJ et al. Single-ZnO-Nanowire Memory. IEEE Transactions on Electron Devices. 2011 Jun;58(6):1735-1740. 5741715. Epub 2011 Apr 5. doi: 10.1109/TED.2011.2121914

Chiang, Yen-De ; Chang, Wen-Yuan ; Ho, Ching-Yuan et al. / Single-ZnO-Nanowire Memory. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 6. pp. 1735-1740.