Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

Zhiyuan Zeng; Zongyou Yin; Xiao Huang; Hai Li; Qiyuan He; Gang Lu; Freddy Boey; Hua Zhang

doi:10.1002/anie.201106004

Author(s)

Zongyou Yin
Xiao Huang
Hai Li
Gang Lu

Detail(s)

Original language	English
Pages (from-to)	11093-11097
Journal / Publication	Angewandte Chemie - International Edition
Volume	50
Issue number	47
Online published	21 Oct 2011
Publication status	Published - 18 Nov 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1002/anie.201106004 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-81255169387&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(8871cc62-1780-499e-bd20-01bbeacdd0df).html

Abstract

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS₂, WS₂, TiS₂, TaS₂, ZrS₂, and graphene were fabricated through an electrochemical lithiation process. The production of single-layer MoS₂ was achieved in 92 % yield. A single-layer MoS₂-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research Area(s)

electrochemistry, nanomaterials, nanosheets, semiconductors, sensors

Citation Format(s)

[ RIS ] [ BibTeX ]

Single-Layer Semiconducting Nanosheets : High-Yield Preparation and Device Fabrication. / Zeng, Zhiyuan; Yin, Zongyou; Huang, Xiao et al.

In: Angewandte Chemie - International Edition, Vol. 50, No. 47, 18.11.2011, p. 11093-11097.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review

Zeng, Z, Yin, Z, Huang, X, Li, H, He, Q, Lu, G, Boey, F & Zhang, H 2011, 'Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication', Angewandte Chemie - International Edition, vol. 50, no. 47, pp. 11093-11097. https://doi.org/10.1002/anie.201106004

Zeng, Z., Yin, Z., Huang, X., Li, H., He, Q., Lu, G., Boey, F., & Zhang, H. (2011). Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication. Angewandte Chemie - International Edition, 50(47), 11093-11097. https://doi.org/10.1002/anie.201106004

Zeng Z, Yin Z, Huang X, Li H, He Q, Lu G et al. Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication. Angewandte Chemie - International Edition. 2011 Nov 18;50(47):11093-11097. Epub 2011 Oct 21. doi: 10.1002/anie.201106004

Zeng, Zhiyuan ; Yin, Zongyou ; Huang, Xiao et al. / Single-Layer Semiconducting Nanosheets : High-Yield Preparation and Device Fabrication. In: Angewandte Chemie - International Edition. 2011 ; Vol. 50, No. 47. pp. 11093-11097.