Single-crystalline metal-oxide dielectrics for top-gate 2D transistors
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Original language | English |
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Pages (from-to) | 788-794 |
Journal / Publication | Nature |
Volume | 632 |
Issue number | 8026 |
Online published | 7 Aug 2024 |
Publication status | Published - 22 Aug 2024 |
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85200682134&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(b61dc145-08c5-4ea7-b1e1-92c7070a7612).html |
Abstract
Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors1–4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al2O3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS2 FETs characterized by a steep subthreshold swing of 61 mV dec−1, high on/off current ratio of 108 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors. © The Author(s) 2024.
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Single-crystalline metal-oxide dielectrics for top-gate 2D transistors. / Zeng, Daobing; Zhang, Ziyang; Xue, Zhongying et al.
In: Nature, Vol. 632, No. 8026, 22.08.2024, p. 788-794.
In: Nature, Vol. 632, No. 8026, 22.08.2024, p. 788-794.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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