Single-ZnO-Nanowire Memory

Yen-De Chiang; Wen-Yuan Chang; Ching-Yuan Ho; Cheng-Ying Chen; Chih-Hsiang Ho; Su-Jien Lin; Tai-Bor Wu; Jr-Hau He

doi:10.1109/TED.2011.2121914

Single-ZnO-Nanowire Memory

Yen-De Chiang
, Wen-Yuan Chang
, Ching-Yuan Ho
, Cheng-Ying Chen
, Chih-Hsiang Ho
, Su-Jien Lin
, Tai-Bor Wu
, Jr-Hau He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

83 Citations (Scopus)

Abstract

Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 10⁵. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

Original language	English
Article number	5741715
Pages (from-to)	1735-1740
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	6
Online published	5 Apr 2011
DOIs	https://doi.org/10.1109/TED.2011.2121914
Publication status	Published - Jun 2011
Externally published	Yes

Research Keywords

Nanowire (NW)
resistance random access memory (ReRAM)
resistive switching
space-charge-limited (SCL) conduction
ZnO

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title = "Single-ZnO-Nanowire Memory",

abstract = "Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.",

keywords = "Nanowire (NW), resistance random access memory (ReRAM), resistive switching, space-charge-limited (SCL) conduction, ZnO",

author = "Yen-De Chiang and Wen-Yuan Chang and Ching-Yuan Ho and Cheng-Ying Chen and Chih-Hsiang Ho and Su-Jien Lin and Tai-Bor Wu and Jr-Hau He",

year = "2011",

month = jun,

doi = "10.1109/TED.2011.2121914",

language = "English",

volume = "58",

pages = "1735--1740",

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TY - JOUR

T1 - Single-ZnO-Nanowire Memory

AU - Chiang, Yen-De

AU - Chang, Wen-Yuan

AU - Ho, Ching-Yuan

AU - Chen, Cheng-Ying

AU - Ho, Chih-Hsiang

AU - Lin, Su-Jien

AU - Wu, Tai-Bor

AU - He, Jr-Hau

PY - 2011/6

Y1 - 2011/6

N2 - Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

AB - Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM), selected-area electron diffraction, and high-resolution TEM might play a role in the resistive switching behavior. The endurance of resistive switching can be enhanced by further increasing the sweeping voltage. This paper brings an exciting possibility of building next-generation memory devices based on NWs.

KW - Nanowire (NW)

KW - resistance random access memory (ReRAM)

KW - resistive switching

KW - space-charge-limited (SCL) conduction

KW - ZnO

UR - https://www.scopus.com/pages/publications/79957663921

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79957663921&origin=recordpage

U2 - 10.1109/TED.2011.2121914

DO - 10.1109/TED.2011.2121914

M3 - RGC 21 - Publication in refereed journal

SN - 0018-9383

VL - 58

SP - 1735

EP - 1740

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

M1 - 5741715

ER -

Single-ZnO-Nanowire Memory

Abstract

Research Keywords

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