Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

Wenfeng Zhang; Jiansheng Jie; Zhubing He; Silu Tao; Xia Fan; Yechun Zhou; Guodong Yuan; Linbao Luo; Wenjun Zhang; Chun-Sing Lee; Shuit-Tong Lee

doi:10.1063/1.2909716

Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

Wenfeng Zhang
, Jiansheng Jie
, Zhubing He
, Silu Tao
, Xia Fan
, Yechun Zhou
, Guodong Yuan
, Linbao Luo
, Wenjun Zhang
, Chun-Sing Lee
, Shuit-Tong Lee

Centre of Super-Diamond and Advanced Films

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

37 Citations (Scopus)

Abstract

Zn-doped In2 O3 nanowires (NWs) were prepared by simple chemical vapor deposition and were systematically characterized. Field-effect transistors (FETs) constructed from the Zn-doped In2 O3 nanowires exhibit excellent performance characteristics such as high mobility, "high-on-state" current of 105 A and large on/off current ratio of 107. Single-NW-FETs can successfully drive an organic light-emitting diode, revealing the application potential of Zn-doped In2 O3 NW-FETs in high-performance displays. © 2008 American Institute of Physics.

Original language	English
Article number	153312
Journal	Applied Physics Letters
Volume	92
Issue number	15
DOIs	https://doi.org/10.1063/1.2909716
Publication status	Published - 2008

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title = "Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode",

abstract = "Zn-doped In2 O3 nanowires (NWs) were prepared by simple chemical vapor deposition and were systematically characterized. Field-effect transistors (FETs) constructed from the Zn-doped In2 O3 nanowires exhibit excellent performance characteristics such as high mobility, {"}high-on-state{"} current of 105 A and large on/off current ratio of 107. Single-NW-FETs can successfully drive an organic light-emitting diode, revealing the application potential of Zn-doped In2 O3 NW-FETs in high-performance displays. {\textcopyright} 2008 American Institute of Physics.",

author = "Wenfeng Zhang and Jiansheng Jie and Zhubing He and Silu Tao and Xia Fan and Yechun Zhou and Guodong Yuan and Linbao Luo and Wenjun Zhang and Chun-Sing Lee and Shuit-Tong Lee",

year = "2008",

doi = "10.1063/1.2909716",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

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TY - JOUR

T1 - Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

AU - Zhang, Wenfeng

AU - Jie, Jiansheng

AU - He, Zhubing

AU - Tao, Silu

AU - Fan, Xia

AU - Zhou, Yechun

AU - Yuan, Guodong

AU - Luo, Linbao

AU - Zhang, Wenjun

AU - Lee, Chun-Sing

AU - Lee, Shuit-Tong

PY - 2008

Y1 - 2008

N2 - Zn-doped In2 O3 nanowires (NWs) were prepared by simple chemical vapor deposition and were systematically characterized. Field-effect transistors (FETs) constructed from the Zn-doped In2 O3 nanowires exhibit excellent performance characteristics such as high mobility, "high-on-state" current of 105 A and large on/off current ratio of 107. Single-NW-FETs can successfully drive an organic light-emitting diode, revealing the application potential of Zn-doped In2 O3 NW-FETs in high-performance displays. © 2008 American Institute of Physics.

AB - Zn-doped In2 O3 nanowires (NWs) were prepared by simple chemical vapor deposition and were systematically characterized. Field-effect transistors (FETs) constructed from the Zn-doped In2 O3 nanowires exhibit excellent performance characteristics such as high mobility, "high-on-state" current of 105 A and large on/off current ratio of 107. Single-NW-FETs can successfully drive an organic light-emitting diode, revealing the application potential of Zn-doped In2 O3 NW-FETs in high-performance displays. © 2008 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/42349085186

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-42349085186&origin=recordpage

U2 - 10.1063/1.2909716

DO - 10.1063/1.2909716

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153312

ER -

Single zinc-doped indium oxide nanowire as driving transistor for organic light-emitting diode

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