Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

Zhiyuan Zeng; Zongyou Yin; Xiao Huang; Hai Li; Qiyuan He; Gang Lu; Freddy Boey; Hua Zhang

doi:10.1002/anie.201106004

Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

Zhiyuan Zeng
, Zongyou Yin
, Xiao Huang
, Hai Li
, Qiyuan He
, Gang Lu
, Freddy Boey
, Hua Zhang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1794 Citations (Scopus)

Abstract

Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS₂, WS₂, TiS₂, TaS₂, ZrS₂, and graphene were fabricated through an electrochemical lithiation process. The production of single-layer MoS₂ was achieved in 92 % yield. A single-layer MoS₂-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	11093-11097
Journal	Angewandte Chemie - International Edition
Volume	50
Issue number	47
Online published	21 Oct 2011
DOIs	https://doi.org/10.1002/anie.201106004
Publication status	Published - 18 Nov 2011
Externally published	Yes

Research Keywords

electrochemistry
nanomaterials
nanosheets
semiconductors
sensors

Access Output

10.1002/anie.201106004

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{8871cc621780499ebd2001bbeacdd0df,

title = "Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication",

abstract = "Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process. The production of single-layer MoS2 was achieved in 92 \% yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. {\textcopyright} 2011 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

keywords = "electrochemistry, nanomaterials, nanosheets, semiconductors, sensors",

author = "Zhiyuan Zeng and Zongyou Yin and Xiao Huang and Hai Li and Qiyuan He and Gang Lu and Freddy Boey and Hua Zhang",

year = "2011",

month = nov,

day = "18",

doi = "10.1002/anie.201106004",

language = "English",

volume = "50",

pages = "11093--11097",

journal = "Angewandte Chemie - International Edition",

issn = "1433-7851",

publisher = "John Wiley \& Sons",

number = "47",

}

TY - JOUR

T1 - Single-Layer Semiconducting Nanosheets

T2 - High-Yield Preparation and Device Fabrication

AU - Zeng, Zhiyuan

AU - Yin, Zongyou

AU - Huang, Xiao

AU - Li, Hai

AU - He, Qiyuan

AU - Lu, Gang

AU - Boey, Freddy

AU - Zhang, Hua

PY - 2011/11/18

Y1 - 2011/11/18

N2 - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process. The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - Properly piled up: Single-layer 2D semiconducting nanomaterials of MoS2, WS2, TiS2, TaS2, ZrS2, and graphene were fabricated through an electrochemical lithiation process. The production of single-layer MoS2 was achieved in 92 % yield. A single-layer MoS2-based thin-film transistor was fabricated, which was used for sensing NO at a detection limit of 190 ppt. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - electrochemistry

KW - nanomaterials

KW - nanosheets

KW - semiconductors

KW - sensors

UR - https://www.scopus.com/pages/publications/81255169387

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-81255169387&origin=recordpage

U2 - 10.1002/anie.201106004

DO - 10.1002/anie.201106004

M3 - RGC 21 - Publication in refereed journal

SN - 1433-7851

VL - 50

SP - 11093

EP - 11097

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 47

ER -

Single-Layer Semiconducting Nanosheets: High-Yield Preparation and Device Fabrication

Abstract

Research Keywords

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this