Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Y. E. Romanyuk
  • W. Walukiewicz
  • Z. V. Lavrynyuk
  • V. I. Pekhnyo
  • O. V. Parasyuk

Detail(s)

Original languageEnglish
Pages (from-to)1495-1499
Journal / PublicationSolar Energy Materials and Solar Cells
Volume92
Issue number11
Publication statusPublished - Nov 2008
Externally publishedYes

Abstract

The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the 'Cu3Cd2In3S8'-'CuCd2InSe4' compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015-1016 cm-3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • Crystal growth, CuInSe2, Solid solution

Citation Format(s)

Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. / Romanyuk, Y. E.; Yu, K. M.; Walukiewicz, W.; Lavrynyuk, Z. V.; Pekhnyo, V. I.; Parasyuk, O. V.

In: Solar Energy Materials and Solar Cells, Vol. 92, No. 11, 11.2008, p. 1495-1499.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review