Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system

Y. E. Romanyuk; K. M. Yu; W. Walukiewicz; Z. V. Lavrynyuk; V. I. Pekhnyo; O. V. Parasyuk

doi:10.1016/j.solmat.2008.06.014

Single crystal growth and properties of γ-phase in the CuInSe₂+2CdS⇔CuInS₂+2CdSe reciprocal system

Y. E. Romanyuk^*, K. M. Yu, W. Walukiewicz, Z. V. Lavrynyuk, V. I. Pekhnyo, O. V. Parasyuk

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

The intermediate solid solution, γ-phase, exists in the CuInSe₂+2CdS⇔CuInS₂+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the 'Cu₃Cd₂In₃S₈'-'CuCd₂InSe₄' compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 10¹⁵-10¹⁶ cm^-3 range and mobilities up to 18 cm²/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1495-1499
Journal	Solar Energy Materials and Solar Cells
Volume	92
Issue number	11
DOIs	https://doi.org/10.1016/j.solmat.2008.06.014
Publication status	Published - Nov 2008
Externally published	Yes

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SDG 7 Affordable and Clean Energy

Research Keywords

Crystal growth
CuInSe2
Solid solution

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10.1016/j.solmat.2008.06.014

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Cite this

@article{1ce22ad6a4644cb4a24a245905b46538,

title = "Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system",

abstract = "The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the 'Cu3Cd2In3S8'-'CuCd2InSe4' compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015-1016 cm-3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "Crystal growth, CuInSe2, Solid solution",

author = "Romanyuk, {Y. E.} and Yu, {K. M.} and W. Walukiewicz and Lavrynyuk, {Z. V.} and Pekhnyo, {V. I.} and Parasyuk, {O. V.}",

year = "2008",

month = nov,

doi = "10.1016/j.solmat.2008.06.014",

language = "English",

volume = "92",

pages = "1495--1499",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system

AU - Romanyuk, Y. E.

AU - Yu, K. M.

AU - Walukiewicz, W.

AU - Lavrynyuk, Z. V.

AU - Pekhnyo, V. I.

AU - Parasyuk, O. V.

PY - 2008/11

Y1 - 2008/11

N2 - The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the 'Cu3Cd2In3S8'-'CuCd2InSe4' compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015-1016 cm-3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. © 2008 Elsevier B.V. All rights reserved.

AB - The intermediate solid solution, γ-phase, exists in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system. It crystallizes in the cubic structure and has a wide homogeneity range. Single crystals of the γ-phase are grown by a modified Bridgman method and their composition, crystal structure, optical and electrical properties are studied. The band gap varies from 1.43 to 1.05 eV along the 'Cu3Cd2In3S8'-'CuCd2InSe4' compositional section. The crystals are photosensitive, mostly p-type, with hole concentrations in the 1015-1016 cm-3 range and mobilities up to 18 cm2/V s. The results indicate that the γ-phase can be considered as a new absorbing material for thin-film solar cells. © 2008 Elsevier B.V. All rights reserved.

KW - Crystal growth

KW - CuInSe2

KW - Solid solution

UR - http://www.scopus.com/inward/record.url?scp=50249106422&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-50249106422&origin=recordpage

U2 - 10.1016/j.solmat.2008.06.014

DO - 10.1016/j.solmat.2008.06.014

M3 - RGC 21 - Publication in refereed journal

SN - 0927-0248

VL - 92

SP - 1495

EP - 1499

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 11

ER -