TY - JOUR
T1 - Single-charge tunneling in uncoupled boron-doped silicon nanochains
AU - Ma, D. D D
AU - Chan, K. S.
AU - Chen, D. M.
AU - Lee, S. T.
PY - 2010/1/7
Y1 - 2010/1/7
N2 - Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped silicon nanochains (BDSNs). STM results suggest BDSNs may be an excellent nanostructure to build single-charge tunneling transistors. STS measurements clearly reveal Coulomb blockade (CB) effects in BDSN at 25 K with a large charging energy, which should make CB effect observable even at RT. The CB characteristics are attributed to boron- or impurity-induced local states at the surface or interface. The experimental results suggest the possibility of realizing single-charge nanodevices by exploiting boron- or defect-induced charge trapping and de-trapping processes at the nanoparticles of BDSNs. © 2009 Elsevier B.V. All rights reserved.
AB - Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped silicon nanochains (BDSNs). STM results suggest BDSNs may be an excellent nanostructure to build single-charge tunneling transistors. STS measurements clearly reveal Coulomb blockade (CB) effects in BDSN at 25 K with a large charging energy, which should make CB effect observable even at RT. The CB characteristics are attributed to boron- or impurity-induced local states at the surface or interface. The experimental results suggest the possibility of realizing single-charge nanodevices by exploiting boron- or defect-induced charge trapping and de-trapping processes at the nanoparticles of BDSNs. © 2009 Elsevier B.V. All rights reserved.
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U2 - 10.1016/j.cplett.2009.11.047
DO - 10.1016/j.cplett.2009.11.047
M3 - RGC 21 - Publication in refereed journal
SN - 0009-2614
VL - 484
SP - 258
EP - 260
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 4-6
ER -