Single-charge tunneling in uncoupled boron-doped silicon nanochains

D. D D Ma, K. S. Chan, D. M. Chen, S. T. Lee

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

2 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements have been performed on boron-doped silicon nanochains (BDSNs). STM results suggest BDSNs may be an excellent nanostructure to build single-charge tunneling transistors. STS measurements clearly reveal Coulomb blockade (CB) effects in BDSN at 25 K with a large charging energy, which should make CB effect observable even at RT. The CB characteristics are attributed to boron- or impurity-induced local states at the surface or interface. The experimental results suggest the possibility of realizing single-charge nanodevices by exploiting boron- or defect-induced charge trapping and de-trapping processes at the nanoparticles of BDSNs. © 2009 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)258-260
JournalChemical Physics Letters
Volume484
Issue number4-6
DOIs
Publication statusPublished - 7 Jan 2010

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