Single band electronic conduction in hafnium oxide prepared by atomic layer deposition

S. Shaimeev; V. Gritsenko; K. Kukli; H. Wong; E. H. Lee; C. Kim

doi:10.1109/EDSSC.2005.1635372

Single band electronic conduction in hafnium oxide prepared by atomic layer deposition

S. Shaimeev, V. Gritsenko, K. Kukli, H. Wong, E. H. Lee, C. Kim

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Citation (Scopus)

Abstract

Current-voltage and capacitance-voltage measurements on MOS structures with hafnium gate oxide (HfO₂) prepared by atomic layer deposition were conducted to determine the dominant current conduction in the Al/HfO ₂/Si structure. In n-type substrate MOS structures, electron injection from Al into HfO₂ is observed when the Al electrode is negatively biased. Whereas in p-type MOS capacitors at negative biasing, no hole injection can be detected and the current in the insulator is again due to the electron injection from Al. These results unambiguously indicate that in both p- and n- type substrates and at both biasing polarities only electronic current conduction in the Si/HfO₂/Al is significant. ©2005 IEEE.

Original language	English
Title of host publication	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages	703-706
DOIs	https://doi.org/10.1109/EDSSC.2005.1635372
Publication status	Published - 2006
Event	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) - New World Renaissance Hotel, Hong Kong, China Duration: 19 Dec 2005 → 21 Dec 2005

Conference

Conference	2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)
Place	China
City	Hong Kong
Period	19/12/05 → 21/12/05

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@inproceedings{91560767f5e24a6b993bdfe9193dcb67,

title = "Single band electronic conduction in hafnium oxide prepared by atomic layer deposition",

abstract = "Current-voltage and capacitance-voltage measurements on MOS structures with hafnium gate oxide (HfO2) prepared by atomic layer deposition were conducted to determine the dominant current conduction in the Al/HfO 2/Si structure. In n-type substrate MOS structures, electron injection from Al into HfO2 is observed when the Al electrode is negatively biased. Whereas in p-type MOS capacitors at negative biasing, no hole injection can be detected and the current in the insulator is again due to the electron injection from Al. These results unambiguously indicate that in both p- and n- type substrates and at both biasing polarities only electronic current conduction in the Si/HfO2/Al is significant. {\textcopyright}2005 IEEE.",

author = "S. Shaimeev and V. Gritsenko and K. Kukli and H. Wong and Lee, {E. H.} and C. Kim",

year = "2006",

doi = "10.1109/EDSSC.2005.1635372",

language = "English",

isbn = "0780393392",

pages = "703--706",

booktitle = "2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005) ; Conference date: 19-12-2005 Through 21-12-2005",

}

Shaimeev, S, Gritsenko, V, Kukli, K, Wong, H, Lee, EH & Kim, C 2006, Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635372, pp. 703-706, 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005), Hong Kong, China, 19/12/05. https://doi.org/10.1109/EDSSC.2005.1635372

Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. / Shaimeev, S.; Gritsenko, V.; Kukli, K. et al.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 703-706 1635372.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Single band electronic conduction in hafnium oxide prepared by atomic layer deposition

AU - Shaimeev, S.

AU - Gritsenko, V.

AU - Kukli, K.

AU - Wong, H.

AU - Lee, E. H.

AU - Kim, C.

PY - 2006

Y1 - 2006

N2 - Current-voltage and capacitance-voltage measurements on MOS structures with hafnium gate oxide (HfO2) prepared by atomic layer deposition were conducted to determine the dominant current conduction in the Al/HfO 2/Si structure. In n-type substrate MOS structures, electron injection from Al into HfO2 is observed when the Al electrode is negatively biased. Whereas in p-type MOS capacitors at negative biasing, no hole injection can be detected and the current in the insulator is again due to the electron injection from Al. These results unambiguously indicate that in both p- and n- type substrates and at both biasing polarities only electronic current conduction in the Si/HfO2/Al is significant. ©2005 IEEE.

AB - Current-voltage and capacitance-voltage measurements on MOS structures with hafnium gate oxide (HfO2) prepared by atomic layer deposition were conducted to determine the dominant current conduction in the Al/HfO 2/Si structure. In n-type substrate MOS structures, electron injection from Al into HfO2 is observed when the Al electrode is negatively biased. Whereas in p-type MOS capacitors at negative biasing, no hole injection can be detected and the current in the insulator is again due to the electron injection from Al. These results unambiguously indicate that in both p- and n- type substrates and at both biasing polarities only electronic current conduction in the Si/HfO2/Al is significant. ©2005 IEEE.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-43549089065&origin=recordpage

U2 - 10.1109/EDSSC.2005.1635372

DO - 10.1109/EDSSC.2005.1635372

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0780393392

SN - 9780780393394

SP - 703

EP - 706

BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2005 IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC 2005)

Y2 - 19 December 2005 through 21 December 2005

ER -

Single band electronic conduction in hafnium oxide prepared by atomic layer deposition

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