Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Meng-Lin Tsai
  • Ming-Yang Li
  • José Ramón Durán Retamal
  • Kai-Tak Lam
  • Yung-Chang Lin
  • Kazu Suenaga
  • Lih-Juann Chen
  • Gengchiau Liang
  • Lain-Jong Li

Detail(s)

Original languageEnglish
Article number1701168
Journal / PublicationAdvanced Materials
Volume29
Issue number32
Online published26 Jun 2017
Publication statusPublished - 25 Aug 2017
Externally publishedYes

Abstract

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe2-MoS2 lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. These robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.

Research Area(s)

  • 2D materials, lateral heterostructures, monolayer, solar cells, transition metal dichalcogenides

Citation Format(s)

Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. / Tsai, Meng-Lin; Li, Ming-Yang; Retamal, José Ramón Durán et al.
In: Advanced Materials, Vol. 29, No. 32, 1701168, 25.08.2017.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review