Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Orb Acton
  • Manish Dubey
  • Tobias Weidner
  • Kevin M. O'Malley
  • Tae-Wook Kim
  • Guy G. Ting
  • Daniel Hutchins
  • J. E. Baio
  • Tracy C. Lovejoy
  • Alexander H. Gage
  • David G. Castner
  • Hong Ma

Detail(s)

Original languageEnglish
Pages (from-to)1476-1488
Journal / PublicationAdvanced Functional Materials
Volume21
Issue number8
Publication statusPublished - 22 Apr 2011
Externally publishedYes

Abstract

An efficient process is developed by spin-coating a single-component, self-assembled monolayer (SAM) to simultaneously modify the bottom-contact electrode and dielectric surfaces of organic thin-film transistors (OTFTs). This effi cient interface modifi cation is achieved using n-alkyl phosphonic acid based SAMs to prime silver bottom-contacts and hafnium oxide (HfO2) dielectrics in low-voltage OTFTs. Surface characterization using near edge X-ray absorption fi ne structure (NEXAFS) spectroscopy, X-ray photoelectron spectroscopy (XPS), attenuated total reflectance Fourier transform infrared (ATR-FTIR) spectroscopy, atomic force microscopy (AFM), and spectroscopic ellipsometry suggest this process yields structurally well-defi ned phosphonate SAMs on both metal and oxide surfaces. Rational selection of the alkyl length of the SAM leads to greatly enhanced performance for both n-channel (C 60) and p-channel (pentacene) based OTFTs. Specifi cally, SAMs of n-octylphos-phonic acid (OPA) provide both low-contact resistance at the bottom-contact electrodes and excellent interfacial properties for compact semiconductor grain growth with high carrier mobilities. OTFTs based on OPA modifi ed silver electrode/HfO2 dielectric bottom-contact structures can be operated using <3V with low contact resistance (down to 700 Ohm-cm), low subthreshold swing (as low as 75 mV dec-1), high on/off current ratios of 107, and charge carrier mobilities as high as 4.6 and 0.8 cm 2 V-1 s-1, for C60 and pentacene, respectively. These results demonstrate that this is a simple and efficient process for improving the performance of bottom-contact OTFTs. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Research Area(s)

  • Hybrid Materials, Monolayers, Organic Field Effect Transistors, Organic Semiconductors, Self-Assembly

Citation Format(s)

Simultaneous modification of bottom-contact electrode and dielectric surfaces for organic thin-film transistors through single-component spin-cast monolayers. / Acton, Orb; Dubey, Manish; Weidner, Tobias; O'Malley, Kevin M.; Kim, Tae-Wook; Ting, Guy G.; Hutchins, Daniel; Baio, J. E.; Lovejoy, Tracy C.; Gage, Alexander H.; Castner, David G.; Ma, Hong; Jen, Alex K.-Y.

In: Advanced Functional Materials, Vol. 21, No. 8, 22.04.2011, p. 1476-1488.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal