Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1-xGex dual source structure

Ming Zhu; Peng Chen; Ricky K. Y. Fu; Weili Liu; Chenglu Lin; Paul K. Chu

doi:10.1016/j.mseb.2004.07.070

Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si_1-xGe_x dual source structure

Ming Zhu
, Peng Chen
, Ricky K. Y. Fu
, Weili Liu
, Chenglu Lin
, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

The effect of the Si_1-xGe_x source with an underlying p⁺ region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si_1-xGe_x source and buried p⁺ region are favorable to the dispersion of holes generated by impact ionization.

Original language	English
Pages (from-to)	264-268
Journal	Materials Science and Engineering B
Volume	114-115
Online published	9 Sept 2004
DOIs	https://doi.org/10.1016/j.mseb.2004.07.070
Publication status	Published - 15 Dec 2004
Event	European Materials Research Society 2004 Spring Meeting (E-MRS 2004 Spring Meeting) - Duration: 24 May 2004 → 28 May 2004 https://www.european-mrs.com/about/history

Research Keywords

Partially depleted SOI MOSFET
Floating body effect
Bandgap narrowing
Impact ionization

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10.1016/j.mseb.2004.07.070

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Cite this

@article{ca3e1ac18f1647e495354a41e2c3760d,

title = "Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1-xGex dual source structure",

abstract = "The effect of the Si1-xGex source with an underlying p+ region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si1-xGex source and buried p+ region are favorable to the dispersion of holes generated by impact ionization. ",

keywords = "Partially depleted SOI MOSFET, Floating body effect, Bandgap narrowing, Impact ionization",

author = "Ming Zhu and Peng Chen and Fu, \{Ricky K. Y.\} and Weili Liu and Chenglu Lin and Chu, \{Paul K.\}",

year = "2004",

month = dec,

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doi = "10.1016/j.mseb.2004.07.070",

language = "English",

volume = "114-115",

pages = "264--268",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

publisher = "Elsevier Ltd.",

note = "European Materials Research Society 2004 Spring Meeting (E-MRS 2004 Spring Meeting) ; Conference date: 24-05-2004 Through 28-05-2004",

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TY - JOUR

T1 - Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1-xGex dual source structure

AU - Zhu, Ming

AU - Chen, Peng

AU - Fu, Ricky K. Y.

AU - Liu, Weili

AU - Lin, Chenglu

AU - Chu, Paul K.

PY - 2004/12/15

Y1 - 2004/12/15

N2 - The effect of the Si1-xGex source with an underlying p+ region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si1-xGex source and buried p+ region are favorable to the dispersion of holes generated by impact ionization.

AB - The effect of the Si1-xGex source with an underlying p+ region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si1-xGex source and buried p+ region are favorable to the dispersion of holes generated by impact ionization.

KW - Partially depleted SOI MOSFET

KW - Floating body effect

KW - Bandgap narrowing

KW - Impact ionization

UR - https://www.scopus.com/pages/publications/10644236230

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-10644236230&origin=recordpage

U2 - 10.1016/j.mseb.2004.07.070

DO - 10.1016/j.mseb.2004.07.070

M3 - RGC 21 - Publication in refereed journal

SN - 0921-5107

VL - 114-115

SP - 264

EP - 268

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

T2 - European Materials Research Society 2004 Spring Meeting (E-MRS 2004 Spring Meeting)

Y2 - 24 May 2004 through 28 May 2004

ER -