Simulation of hot-carrier reliability in MOS integrated circuits

H. Wong; M. C. Poon

doi:10.1109/ICMEL.1997.632919

Simulation of hot-carrier reliability in MOS integrated circuits

H. Wong, M. C. Poon

Department of Electrical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits. © 1997 IEEE

Original language	English
Title of host publication	1997 21st International Conference on Microelectronics. Proceedings
Publisher	IEEE
Pages	625-628
Volume	2
ISBN (Print)	0-7803-3664-X
DOIs	https://doi.org/10.1109/ICMEL.1997.632919
Publication status	Published - Sept 1997
Event	21st International Conference on Microelectronics (MIEL'97) - Nis, Serbia Duration: 14 Sept 1997 → 17 Sept 1997

Conference

Conference	21st International Conference on Microelectronics (MIEL'97)
Place	Serbia
City	Nis
Period	14/09/97 → 17/09/97

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title = "Simulation of hot-carrier reliability in MOS integrated circuits",

abstract = "A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits. {\textcopyright} 1997 IEEE",

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booktitle = "1997 21st International Conference on Microelectronics. Proceedings",

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AU - Poon, M. C.

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Y1 - 1997/9

N2 - A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits. © 1997 IEEE

AB - A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits. © 1997 IEEE

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031388561&origin=recordpage

U2 - 10.1109/ICMEL.1997.632919

DO - 10.1109/ICMEL.1997.632919

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-3664-X

VL - 2

SP - 625

EP - 628

BT - 1997 21st International Conference on Microelectronics. Proceedings

PB - IEEE

T2 - 21st International Conference on Microelectronics (MIEL'97)

Y2 - 14 September 1997 through 17 September 1997

ER -

Simulation of hot-carrier reliability in MOS integrated circuits

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