Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure

V. A. Gritsenko; Yu N. Novikov; Yu N. Morokov; H. Wong

doi:10.1016/S0026-2714(98)00047-X

Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure

V. A. Gritsenko
, Yu N. Novikov
, Yu N. Morokov
, H. Wong

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

14 Citations (Scopus)

Abstract

Numerical simulation using MINDO/3 was performed to study the electronic structure of Si-Si bond traps in the silicon oxide/nitride/oxide structure. Results show that the neutral diamagnetic Si-Si bond in Si₃N₄ can capture both electrons and holes. Simulation results also suggest that the creation of charged diamagnetic defect pairs is unfavorable in Si₃N₄. Electron and hole trapping models are also proposed for the Si-Si bond. © 1998 Elsevier Science Ltd. All rights reserved.

Original language	English
Pages (from-to)	1457-1464
Journal	Microelectronics Reliability
Volume	38
Issue number	9
DOIs	https://doi.org/10.1016/S0026-2714(98)00047-X
Publication status	Published - 1998

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title = "Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure",

abstract = "Numerical simulation using MINDO/3 was performed to study the electronic structure of Si-Si bond traps in the silicon oxide/nitride/oxide structure. Results show that the neutral diamagnetic Si-Si bond in Si3N4 can capture both electrons and holes. Simulation results also suggest that the creation of charged diamagnetic defect pairs is unfavorable in Si3N4. Electron and hole trapping models are also proposed for the Si-Si bond. {\textcopyright} 1998 Elsevier Science Ltd. All rights reserved.",

author = "Gritsenko, \{V. A.\} and Novikov, \{Yu N.\} and Morokov, \{Yu N.\} and H. Wong",

year = "1998",

doi = "10.1016/S0026-2714(98)00047-X",

language = "English",

volume = "38",

pages = "1457--1464",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure

AU - Gritsenko, V. A.

AU - Novikov, Yu N.

AU - Morokov, Yu N.

AU - Wong, H.

PY - 1998

Y1 - 1998

N2 - Numerical simulation using MINDO/3 was performed to study the electronic structure of Si-Si bond traps in the silicon oxide/nitride/oxide structure. Results show that the neutral diamagnetic Si-Si bond in Si3N4 can capture both electrons and holes. Simulation results also suggest that the creation of charged diamagnetic defect pairs is unfavorable in Si3N4. Electron and hole trapping models are also proposed for the Si-Si bond. © 1998 Elsevier Science Ltd. All rights reserved.

AB - Numerical simulation using MINDO/3 was performed to study the electronic structure of Si-Si bond traps in the silicon oxide/nitride/oxide structure. Results show that the neutral diamagnetic Si-Si bond in Si3N4 can capture both electrons and holes. Simulation results also suggest that the creation of charged diamagnetic defect pairs is unfavorable in Si3N4. Electron and hole trapping models are also proposed for the Si-Si bond. © 1998 Elsevier Science Ltd. All rights reserved.

UR - https://www.scopus.com/pages/publications/0032157568

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032157568&origin=recordpage

U2 - 10.1016/S0026-2714(98)00047-X

DO - 10.1016/S0026-2714(98)00047-X

M3 - RGC 21 - Publication in refereed journal

SN - 0026-2714

VL - 38

SP - 1457

EP - 1464

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9

ER -

Simulation of electronic structure of Si-Si bond traps in oxide/nitride/oxide structure

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