SIMS STUDIES ON ANOMALOUS BEHAVIOR OF PHOSPHORUS AND OTHER IMPLANTS IN SILICON.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)201-205
Journal / PublicationRADIAT EFF
VolumeV 61
Issue numberN 3-4
Publication statusPublished - 1982
Externally publishedYes

Abstract

A PHOSPHORUS IMPLANT IN P-TYPE SILICON WAS ANALYZED BY SIMS(SECONDARY ION MASS SPECTROMETRY) AND BOTH THE IMPLANT PROFILE AND THE MATRIX SIGNAL WERE OBSERVED TO EXHIBIT SOME ANOMALOUS BEHAVIOR. FURTHER STUDIES REVEALED THE SAME BEHAVIOR IN OTHER IMPLANTS. THIS PHENOMENON WAS OBSERVED WHEN AN N-TYPE DOPANT WAS IMPLANTED INTO A P-TYPE MATRIX, OR VICE VERSA. HOWEVER, SOME EXCEPTIONS AROSE, MAKING THE INTERPRETATION DIFFICULT. THE USE OF MATRIX SIGNAL NORMALIZATION WAS ADOPTED AND FOUND TO IMPROVE THE RESULTS.

Citation Format(s)

SIMS STUDIES ON ANOMALOUS BEHAVIOR OF PHOSPHORUS AND OTHER IMPLANTS IN SILICON. / CHU, PAUL K.; ZHU, DECHANG; MORRISON, G. H.

In: RADIAT EFF, Vol. V 61, No. N 3-4, 1982, p. 201-205.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal