TY - JOUR
T1 - SIMS STUDIES ON ANOMALOUS BEHAVIOR OF PHOSPHORUS AND OTHER IMPLANTS IN SILICON.
AU - CHU, PAUL K.
AU - ZHU, DECHANG
AU - MORRISON, G. H.
PY - 1982
Y1 - 1982
N2 - A PHOSPHORUS IMPLANT IN P-TYPE SILICON WAS ANALYZED BY SIMS(SECONDARY ION MASS SPECTROMETRY) AND BOTH THE IMPLANT PROFILE AND THE MATRIX SIGNAL WERE OBSERVED TO EXHIBIT SOME ANOMALOUS BEHAVIOR. FURTHER STUDIES REVEALED THE SAME BEHAVIOR IN OTHER IMPLANTS. THIS PHENOMENON WAS OBSERVED WHEN AN N-TYPE DOPANT WAS IMPLANTED INTO A P-TYPE MATRIX, OR VICE VERSA. HOWEVER, SOME EXCEPTIONS AROSE, MAKING THE INTERPRETATION DIFFICULT. THE USE OF MATRIX SIGNAL NORMALIZATION WAS ADOPTED AND FOUND TO IMPROVE THE RESULTS.
AB - A PHOSPHORUS IMPLANT IN P-TYPE SILICON WAS ANALYZED BY SIMS(SECONDARY ION MASS SPECTROMETRY) AND BOTH THE IMPLANT PROFILE AND THE MATRIX SIGNAL WERE OBSERVED TO EXHIBIT SOME ANOMALOUS BEHAVIOR. FURTHER STUDIES REVEALED THE SAME BEHAVIOR IN OTHER IMPLANTS. THIS PHENOMENON WAS OBSERVED WHEN AN N-TYPE DOPANT WAS IMPLANTED INTO A P-TYPE MATRIX, OR VICE VERSA. HOWEVER, SOME EXCEPTIONS AROSE, MAKING THE INTERPRETATION DIFFICULT. THE USE OF MATRIX SIGNAL NORMALIZATION WAS ADOPTED AND FOUND TO IMPROVE THE RESULTS.
UR - http://www.scopus.com/inward/record.url?scp=0020248327&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020248327&origin=recordpage
U2 - 10.1080/00337578208229933
DO - 10.1080/00337578208229933
M3 - RGC 22 - Publication in policy or professional journal
SN - 0033-7579
VL - V 61
SP - 201
EP - 205
JO - RADIAT EFF
JF - RADIAT EFF
IS - N 3-4
ER -