Silicon ring strain creates high-conductance pathways in single-molecule circuits

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Timothy A. Su
  • Jonathan R. Widawsky
  • Rebekka S. Klausen
  • James L. Leighton
  • Michael L. Steigerwald
  • Latha Venkataraman
  • Colin Nuckolls

Detail(s)

Original languageEnglish
Pages (from-to)18331-18334
Journal / PublicationJournal of the American Chemical Society
Volume135
Issue number49
Publication statusPublished - 11 Dec 2013
Externally publishedYes

Abstract

Here we demonstrate for the first time that strained silanes couple directly to gold electrodes in break-junction conductance measurements. We find that strained silicon molecular wires terminated by alkyl sulfide aurophiles behave effectively as single-molecule parallel circuits with competing sulfur-to-sulfur (low G) and sulfur-to-silacycle (high G) pathways. We can switch off the high conducting sulfur-to-silacycle pathway by altering the environment of the electrode surface to disable the Au-silacycle coupling. Additionally, we can switch between conductive pathways in a single molecular junction by modulating the tip-substrate electrode distance. This study provides a new molecular design to control electronics in silicon-based single molecule wires. © 2013 American Chemical Society.

Bibliographic Note

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Citation Format(s)

Silicon ring strain creates high-conductance pathways in single-molecule circuits. / Su, Timothy A.; Widawsky, Jonathan R.; Li, Haixing et al.

In: Journal of the American Chemical Society, Vol. 135, No. 49, 11.12.2013, p. 18331-18334.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review