Silicon nanowire array photoelectrochemical solar cells

Silicon nanowires (SiNWs) arrays prepared by electroless etching show excellent optical antireflectivity over a wide spectral bandwidth from 300 to 1000 nm and surface defect-induced electrical conductivity. Both characteristics make the SiNWs a promising material for photovoltaic cell applications. Photoelectrochemical (PEC) measurements showed the electroless etching SiNWs are remarkably photoactive and effective in enhancing photovoltaic properties including photocurrent and photovoltage. Since electroless etching can enable simple, wafer-scale fabrication of SiNWs without the need of doping. SiNWs array thus prepared show great promise as low-cost and scalable photovoltaic-type PEC materials. © 2008 American Institute of Physics.