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Silicon nanowire: A new shape of crystalline silicon

  • Y. F. Zhang
  • , Y. H. Tang
  • , N. Wang
  • , C. S. Lee
  • , D. P. Yu
  • , I. Bello
  • , S. T. Lee

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

Abstract

Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.
Original languageEnglish
Pages (from-to)993-998
JournalMaterials Research Society Symposium - Proceedings
Volume507
DOIs
Publication statusPublished - 1999
Event1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: 14 Apr 199817 Apr 1998

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