Abstract
Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.
| Original language | English |
|---|---|
| Pages (from-to) | 993-998 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 507 |
| DOIs | |
| Publication status | Published - 1999 |
| Event | 1998 MRS Spring Meeting - San Francisco, CA, USA Duration: 14 Apr 1998 → 17 Apr 1998 |
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