Silicon nanowire : A new shape of crystalline silicon
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
Author(s)
Related Research Unit(s)
Detail(s)
Original language | English |
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Pages (from-to) | 993-998 |
Journal / Publication | Materials Research Society Symposium - Proceedings |
Volume | 507 |
Publication status | Published - 1999 |
Conference
Title | 1998 MRS Spring Meeting |
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City | San Francisco, CA, USA |
Period | 14 - 17 April 1998 |
Link(s)
Abstract
Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.
Citation Format(s)
Silicon nanowire: A new shape of crystalline silicon. / Zhang, Y. F.; Tang, Y. H.; Wang, N. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 507, 1999, p. 993-998.
In: Materials Research Society Symposium - Proceedings, Vol. 507, 1999, p. 993-998.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal