Silicon nanowire : A new shape of crystalline silicon

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

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Author(s)

  • Y. F. Zhang
  • Y. H. Tang
  • N. Wang
  • D. P. Yu
  • I. Bello
  • S. T. Lee

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)993-998
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume507
Publication statusPublished - 1999

Conference

Title1998 MRS Spring Meeting
CitySan Francisco, CA, USA
Period14 - 17 April 1998

Abstract

Silicon nanowires have been synthesized by using a high-temperature laser ablation method. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and lengths up to a few hundreds μm. Raman scattering spectrum shows an asymmetric peak at the same position as that of bulk crystalline silicon. The x-ray diffraction revealed an important contribution from surface oxide. This is due to the high surface-to-volume ratio. Visible photoluminescence (PL) was observed in nanowires with sub-5 nm diameter.

Citation Format(s)

Silicon nanowire: A new shape of crystalline silicon. / Zhang, Y. F.; Tang, Y. H.; Wang, N. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 507, 1999, p. 993-998.

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal