Silicon dots/clusters in silicon nitride : photoluminescence and electron spin resonance

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • V. A. Gritsenko
  • K. S. Zhuravlev
  • A. D. Milov
  • R. W M Kwok
  • J. B. Xu

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)20-24
Journal / PublicationThin Solid Films
Volume353
Issue number1
Publication statusPublished - 29 Sep 1999

Abstract

Photoluminescence (PL) properties of SiNx (0.51 <x <1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial variation of chemical composition in SiNx is proposed to explain these observations. In addition, non-radiative recombination centers (N3Si·, N2SiSi·, NSi2Si·, or Si3Si·), which have prominent effect on the luminescence intensity, are also studied using electron spin resonance (ESR) measurement. The ESR results suggest that the excess silicon content should not be too high in order to have a strong PL.

Citation Format(s)

Silicon dots/clusters in silicon nitride : photoluminescence and electron spin resonance. / Gritsenko, V. A.; Zhuravlev, K. S.; Milov, A. D.; Wong, Hei; Kwok, R. W M; Xu, J. B.

In: Thin Solid Films, Vol. 353, No. 1, 29.09.1999, p. 20-24.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review