Silicon cylinder grown on the surface of a silicon wafer

Yafei Zhang; Gongchuan Li; C. S. Lee; Shui-Tong Lee

doi:10.1016/S0022-0248(97)00368-0

Silicon cylinder grown on the surface of a silicon wafer

Yafei Zhang, Gongchuan Li, C. S. Lee, Shui-Tong Lee

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

3 Citations (Scopus)

Abstract

Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter. Analysis showed that the crystal orientation of the SCSC was the same as that of the silicon (1 0 0) substrate.

Original language	English
Pages (from-to)	337-340
Journal	Journal of Crystal Growth
Volume	182
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(97)00368-0
Publication status	Published - Dec 1997

Research Keywords

Growth
Silicon
Single-crystalline cylinder

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title = "Silicon cylinder grown on the surface of a silicon wafer",

abstract = "Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter. Analysis showed that the crystal orientation of the SCSC was the same as that of the silicon (1 0 0) substrate.",

keywords = "Growth, Silicon, Single-crystalline cylinder",

author = "Yafei Zhang and Gongchuan Li and Lee, {C. S.} and Shui-Tong Lee",

year = "1997",

month = dec,

doi = "10.1016/S0022-0248(97)00368-0",

language = "English",

volume = "182",

pages = "337--340",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Silicon cylinder grown on the surface of a silicon wafer

AU - Zhang, Yafei

AU - Li, Gongchuan

AU - Lee, C. S.

AU - Lee, Shui-Tong

PY - 1997/12

Y1 - 1997/12

N2 - Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter. Analysis showed that the crystal orientation of the SCSC was the same as that of the silicon (1 0 0) substrate.

AB - Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter. Analysis showed that the crystal orientation of the SCSC was the same as that of the silicon (1 0 0) substrate.

KW - Growth

KW - Silicon

KW - Single-crystalline cylinder

UR - http://www.scopus.com/inward/record.url?scp=0031550040&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0031550040&origin=recordpage

U2 - 10.1016/S0022-0248(97)00368-0

DO - 10.1016/S0022-0248(97)00368-0

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 182

SP - 337

EP - 340

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Silicon cylinder grown on the surface of a silicon wafer

Abstract

Research Keywords

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