Silicon cylinder grown on the surface of a silicon wafer

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

  • Yafei Zhang
  • Gongchuan Li
  • C. S. Lee
  • Shui-Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)337-340
Journal / PublicationJournal of Crystal Growth
Volume182
Issue number3-4
Publication statusPublished - Dec 1997

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0031550040&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(3b273c13-4492-4d5e-964c-712a60978023).html

Abstract

Single-crystalline silicon cylinders (SCSC) have been grown on silicon (1 0 0) surface by using a novel surface melting and recrystallizing method. The SCSC was observed standing sturdily in a molten silicon spot and could possibly grow to several millimeters in height and several hundred micrometers in diameter. Analysis showed that the crystal orientation of the SCSC was the same as that of the silicon (1 0 0) substrate.

Research Area(s)

  • Growth, Silicon, Single-crystalline cylinder

Fingerprint

Publication fingerprints text

100
Silicon Wafer Engineering
100
Crystalline Silicon Engineering
100
Silicon Material Science
100
Surface (Surface Sc... Material Science
100
Cylinder Chemistry
33
Crystal Orientation Engineering
33
Melting Point Engineering
12
Surface Melting Chemistry
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Citation Format(s)

[ RIS ] [ BibTeX ]
Silicon cylinder grown on the surface of a silicon wafer. / Zhang, Yafei; Li, Gongchuan; Lee, C. S. et al.
In: Journal of Crystal Growth, Vol. 182, No. 3-4, 12.1997, p. 337-340.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review