Silicon carbide formation by methane plasma immersion ion implantation into silicon

Zhenghua An; Ricky K.Y. Fu; Peng Chen; Weili Liu; Paul K. Chu; Chenglu Lin

doi:10.1116/1.1591741

Author(s)

Zhenghua An
Ricky K.Y. Fu
Peng Chen
Weili Liu
Chenglu Lin

Detail(s)

Original language	English
Pages (from-to)	1375-1379
Journal / Publication	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
Publication status	Published - Jul 2003

Link(s)

DOI	DOI https://doi.org/10.1116/1.1591741 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0141569862&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(472a17b8-e06e-43b0-baad-40bde1ba311e).html

Abstract

Methane plasma immersion ion implantation into silicon was used for the synthesis of silicon carbide films. The molecular ions were found to dissociate upon entry into the sample surface. The films underwent a transformation from hydrogenated amorphous silicon carbide to β-SiC with increasing annealing temperature.

Citation Format(s)

[ RIS ] [ BibTeX ]

Silicon carbide formation by methane plasma immersion ion implantation into silicon. / An, Zhenghua; Fu, Ricky K.Y.; Chen, Peng et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1375-1379.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

An, Z, Fu, RKY, Chen, P, Liu, W, Chu, PK & Lin, C 2003, 'Silicon carbide formation by methane plasma immersion ion implantation into silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1375-1379. https://doi.org/10.1116/1.1591741

An, Z., Fu, R. K. Y., Chen, P., Liu, W., Chu, P. K., & Lin, C. (2003). Silicon carbide formation by methane plasma immersion ion implantation into silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1375-1379. https://doi.org/10.1116/1.1591741

An Z, Fu RKY, Chen P, Liu W, Chu PK, Lin C. Silicon carbide formation by methane plasma immersion ion implantation into silicon. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 Jul;21(4):1375-1379. doi: 10.1116/1.1591741

An, Zhenghua ; Fu, Ricky K.Y. ; Chen, Peng et al. / Silicon carbide formation by methane plasma immersion ion implantation into silicon. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2003 ; Vol. 21, No. 4. pp. 1375-1379.