Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

R. C. Cammarata; C. V. Thompson; C. Hayzelden; K. N. Tu

doi:10.1557/JMR.1990.2133

Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

R. C. Cammarata
, C. V. Thompson
, C. Hayzelden
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

69 Citations (Scopus)

Abstract

The nucleation and growth kinetics of NiSi₂ precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tⁿ, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates. © 1990, Materials Research Society. All rights reserved.

Original language	English
Pages (from-to)	2133-2138
Journal	Journal of Materials Research
Volume	5
Issue number	10
DOIs	https://doi.org/10.1557/JMR.1990.2133
Publication status	Published - Oct 1990
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{ea087dae3e1341a68533c1118849045e,

title = "Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films",

abstract = "The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates. {\textcopyright} 1990, Materials Research Society. All rights reserved.",

author = "Cammarata, \{R. C.\} and Thompson, \{C. V.\} and C. Hayzelden and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1990",

month = oct,

doi = "10.1557/JMR.1990.2133",

language = "English",

volume = "5",

pages = "2133--2138",

journal = "Journal of Materials Research",

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TY - JOUR

T1 - Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

AU - Cammarata, R. C.

AU - Thompson, C. V.

AU - Hayzelden, C.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1990/10

Y1 - 1990/10

N2 - The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates. © 1990, Materials Research Society. All rights reserved.

AB - The nucleation and growth kinetics of NiSi2 precipitation in amorphous silicon thin films ion implanted with nickel was investigated using scanning transmission electron microscopy. It was found that the nucleation rate could be approximately described by a delta function at time t = 0 when the films were annealed between 325 and 400 °C. The growth kinetics of the precipitates at these temperatures were described by r ∝ tn, where r was the average radius and n was about 1/3. This behavior is consistent with models for growth of three-dimensional particles in a two-dimensional diffusion field. It was also found that the implanted amorphous films displayed an enhanced rate of single crystal silicon formation, apparently catalyzed by migrating silicide precipitates. © 1990, Materials Research Society. All rights reserved.

UR - https://www.scopus.com/pages/publications/0025505011

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0025505011&origin=recordpage

U2 - 10.1557/JMR.1990.2133

DO - 10.1557/JMR.1990.2133

M3 - RGC 21 - Publication in refereed journal

SN - 0884-2914

VL - 5

SP - 2133

EP - 2138

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 10

ER -

Silicide precipitation and silicon crystallization in nickel implanted amorphous silicon thin films

Abstract

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