Silicide Contact for Shallow Junction Devices
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 147-151 |
| Journal / Publication | Japanese Journal of Applied Physics |
| Volume | 22 |
| Issue number | S1 |
| Publication status | Published - Jan 1983 |
| Externally published | Yes |
Conference
| Title | 14th Conference (1982 International) on Solid State Devices |
|---|---|
| Place | Japan |
| City | Tokyo |
| Period | 24 - 26 August 1982 |
Link(s)
Abstract
Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed. © IOP Publishing Ltd.
Citation Format(s)
Silicide Contact for Shallow Junction Devices. / Tu, K. N.
In: Japanese Journal of Applied Physics, Vol. 22, No. S1, 01.1983, p. 147-151.
In: Japanese Journal of Applied Physics, Vol. 22, No. S1, 01.1983, p. 147-151.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
