Silicide Contact for Shallow Junction Devices
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
|Journal / Publication||Japanese Journal of Applied Physics|
|Publication status||Published - Jan 1983|
|Title||14th Conference (1982 International) on Solid State Devices|
|Period||24 - 26 August 1982|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0020553526&origin=recordpage|
Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed. © IOP Publishing Ltd.