Silicide Contact for Shallow Junction Devices

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

2 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)147-151
Journal / PublicationJapanese Journal of Applied Physics
Volume22
Issue numberS1
Publication statusPublished - Jan 1983
Externally publishedYes

Conference

Title14th Conference (1982 International) on Solid State Devices
PlaceJapan
CityTokyo
Period24 - 26 August 1982

Abstract

Silicide contacts which have a contact depth about 10 nm will be needed in VLSI shallow junction devices. The use of Si alloys and refractory metal alloys to produce shallow silicide contacts on Si is briefly reviewed with an emphasis on their inter facial reaction and Schottky behavior. The effect of contact reaction on dopant redistribution is discussed. © IOP Publishing Ltd.