Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Meng Su
  • Zhenyu Yang
  • Lei Liao
  • Xuming Zou
  • Jingli Wang
  • Jianlu Wang
  • Weida Hu
  • Xiangheng Xiao
  • Changzhong Jiang
  • Chuansheng Liu
  • Tailiang Guo

Detail(s)

Original languageEnglish
Article number1600078
Journal / PublicationAdvanced Science
Volume3
Issue number9
Publication statusPublished - 1 Sep 2016

Link(s)

Research Area(s)

  • ferroelectric memory, field-effect transistors, In2O3 nanowires, P(VDF-TrFE), side-gated

Citation Format(s)

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. / Su, Meng; Yang, Zhenyu; Liao, Lei; Zou, Xuming; Ho, Johnny C.; Wang, Jingli; Wang, Jianlu; Hu, Weida; Xiao, Xiangheng; Jiang, Changzhong; Liu, Chuansheng; Guo, Tailiang.

In: Advanced Science, Vol. 3, No. 9, 1600078, 01.09.2016.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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