Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

46 Scopus Citations

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Author(s)

Meng Su
Zhenyu Yang
Lei Liao
Xuming Zou
Jingli Wang
Jianlu Wang
Weida Hu
Xiangheng Xiao
Changzhong Jiang
Chuansheng Liu
Tailiang Guo

Detail(s)

Original language	English
Article number	1600078
Journal / Publication	Advanced Science
Volume	3
Issue number	9
Publication status	Published - 1 Sept 2016

Link(s)

DOI	DOI https://doi.org/10.1002/advs.201600078 Final Published version
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Attachment(s)	Documents 11841576.pdf Final Published version, 1.62 MB, PDF Publisher's Copyright Statement This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84985972763&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(2b190f29-46ea-45c9-be1e-f5b9bf896872).html

Research Area(s)

ferroelectric memory, field-effect transistors, In2O3 nanowires, P(VDF-TrFE), side-gated

Citation Format(s)

[ RIS ] [ BibTeX ]

Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. / Su, Meng; Yang, Zhenyu; Liao, Lei et al.
In: Advanced Science, Vol. 3, No. 9, 1600078, 01.09.2016.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Su, M, Yang, Z, Liao, L, Zou, X, Ho, JC, Wang, J, Wang, J, Hu, W, Xiao, X, Jiang, C, Liu, C & Guo, T 2016, 'Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications', Advanced Science, vol. 3, no. 9, 1600078. https://doi.org/10.1002/advs.201600078

Su, M., Yang, Z., Liao, L., Zou, X., Ho, J. C., Wang, J., Wang, J., Hu, W., Xiao, X., Jiang, C., Liu, C., & Guo, T. (2016). Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. Advanced Science, 3(9), Article 1600078. https://doi.org/10.1002/advs.201600078

Su M, Yang Z, Liao L, Zou X, Ho JC, Wang J et al. Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. Advanced Science. 2016 Sept 1;3(9):1600078. doi: 10.1002/advs.201600078

Su, Meng ; Yang, Zhenyu ; Liao, Lei et al. / Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications. In: Advanced Science. 2016 ; Vol. 3, No. 9.

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