Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Meng Su; Zhenyu Yang; Lei Liao; Xuming Zou; Johnny C. Ho; Jingli Wang; Jianlu Wang; Weida Hu; Xiangheng Xiao; Changzhong Jiang; Chuansheng Liu; Tailiang Guo

doi:10.1002/advs.201600078

Side-Gated In₂O₃ Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

Meng Su
, Zhenyu Yang
, Lei Liao^*
, Xuming Zou
, Johnny C. Ho
, Jingli Wang
, Jianlu Wang^*
, Weida Hu
, Xiangheng Xiao
, Changzhong Jiang
, Chuansheng Liu
, Tailiang Guo

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

46 Citations (Scopus)

51 Downloads (CityUHK Scholars)

Original language	English
Article number	1600078
Journal	Advanced Science
Volume	3
Issue number	9
DOIs	https://doi.org/10.1002/advs.201600078
Publication status	Published - 1 Sept 2016

Research Keywords

ferroelectric memory
field-effect transistors
In2O3 nanowires
P(VDF-TrFE)
side-gated

Publisher's Copyright Statement

This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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10.1002/advs.201600078

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Cite this

@article{2b190f2946ea45c9be1ef5b9bf896872,

title = "Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications",

keywords = "ferroelectric memory, field-effect transistors, In2O3 nanowires, P(VDF-TrFE), side-gated",

author = "Meng Su and Zhenyu Yang and Lei Liao and Xuming Zou and Ho, \{Johnny C.\} and Jingli Wang and Jianlu Wang and Weida Hu and Xiangheng Xiao and Changzhong Jiang and Chuansheng Liu and Tailiang Guo",

year = "2016",

month = sep,

day = "1",

doi = "10.1002/advs.201600078",

language = "English",

volume = "3",

journal = "Advanced Science",

issn = "2198-3844",

publisher = "Wiley-VCH Verlag GmbH",

number = "9",

}

TY - JOUR

T1 - Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications

AU - Su, Meng

AU - Yang, Zhenyu

AU - Liao, Lei

AU - Zou, Xuming

AU - Ho, Johnny C.

AU - Wang, Jingli

AU - Wang, Jianlu

AU - Hu, Weida

AU - Xiao, Xiangheng

AU - Jiang, Changzhong

AU - Liu, Chuansheng

AU - Guo, Tailiang

PY - 2016/9/1

Y1 - 2016/9/1

KW - ferroelectric memory

KW - field-effect transistors

KW - In2O3 nanowires

KW - P(VDF-TrFE)

KW - side-gated

UR - https://www.scopus.com/pages/publications/84985972763

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84985972763&origin=recordpage

U2 - 10.1002/advs.201600078

DO - 10.1002/advs.201600078

M3 - RGC 21 - Publication in refereed journal

C2 - 27711260

SN - 2198-3844

VL - 3

JO - Advanced Science

JF - Advanced Science

IS - 9

M1 - 1600078

ER -