Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Xin Ping Qu; Guo Ping Ru; Bing Zong Li; Jie Qin; Zui Min Jiang; Paul Chu

doi:10.1109/ICSICT.1998.785871

Si/CoSi₂/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Xin Ping Qu
, Guo Ping Ru
, Bing Zong Li
, Jie Qin
, Zui Min Jiang
, Paul Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

A new approach to fabricate Si/CoSi₂/Si heterostructure is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi₂/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, high quality CoSi₂ surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

Original language	English
Pages (from-to)	268-270
Journal	International Conference on Solid-State and Integrated Circuit Technology Proceedings
DOIs	https://doi.org/10.1109/ICSICT.1998.785871
Publication status	Published - 1998
Externally published	Yes
Event	5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998

Access Output

10.1109/ICSICT.1998.785871

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{9adc3d3ba2fc4b23add34556dcf51f91,

title = "Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy",

abstract = "A new approach to fabricate Si/CoSi2/Si heterostructure is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.",

author = "Qu, \{Xin Ping\} and Ru, \{Guo Ping\} and Li, \{Bing Zong\} and Jie Qin and Jiang, \{Zui Min\} and Paul Chu",

year = "1998",

doi = "10.1109/ICSICT.1998.785871",

language = "English",

pages = "268--270",

journal = "International Conference on Solid-State and Integrated Circuit Technology Proceedings",

note = "5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

}

TY - JOUR

T1 - Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

AU - Qu, Xin Ping

AU - Ru, Guo Ping

AU - Li, Bing Zong

AU - Qin, Jie

AU - Jiang, Zui Min

AU - Chu, Paul

PY - 1998

Y1 - 1998

N2 - A new approach to fabricate Si/CoSi2/Si heterostructure is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

AB - A new approach to fabricate Si/CoSi2/Si heterostructure is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

UR - https://www.scopus.com/pages/publications/0032226920

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032226920&origin=recordpage

U2 - 10.1109/ICSICT.1998.785871

DO - 10.1109/ICSICT.1998.785871

M3 - RGC 21 - Publication in refereed journal

SP - 268

EP - 270

JO - International Conference on Solid-State and Integrated Circuit Technology Proceedings

JF - International Conference on Solid-State and Integrated Circuit Technology Proceedings

T2 - 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -