Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Xin-Ping Qu; Guo-Ping Ru; Bing-Zong Li; Jie-Qin; Zui-Min Jiang; Paul CHU

doi:10.1109/ICSICT.1998.785871

Si/CoSi₂/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Xin-Ping Qu
, Guo-Ping Ru
, Bing-Zong Li
, Jie-Qin
, Zui-Min Jiang
, Paul CHU

Department of Physics

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

A new approach to fabricate Si/CoSi₂/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi₂/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi₂ surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	1998 5th International Conference on Solid-State and Integrated Circuit Technology
Publisher	IEEE
Pages	268-270
ISBN (Print)	0-7803-4306-9
DOIs	https://doi.org/10.1109/ICSICT.1998.785871
Publication status	Published - Oct 1998
Event	1998 5th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 21 Oct 1998 → 23 Oct 1998

Conference

Conference	1998 5th International Conference on Solid-State and Integrated Circuit Technology
Place	China
City	Beijing
Period	21/10/98 → 23/10/98

Bibliographical note

Research Unit(s) information for this publication is provided by the author(s) concerned.

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10.1109/ICSICT.1998.785871

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@inproceedings{a8e7db4763534f6d986288030887f769,

title = "Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy",

abstract = "A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.",

author = "Xin-Ping Qu and Guo-Ping Ru and Bing-Zong Li and Jie-Qin and Zui-Min Jiang and Paul CHU",

note = "Research Unit(s) information for this publication is provided by the author(s) concerned.; 1998 5th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 21-10-1998 Through 23-10-1998",

year = "1998",

month = oct,

doi = "10.1109/ICSICT.1998.785871",

language = "English",

isbn = "0-7803-4306-9",

pages = "268--270",

booktitle = "Proceedings",

publisher = "IEEE",

address = "United States",

}

Qu, X-P, Ru, G-P, Li, B-Z, Jie-Qin, Jiang, Z-M & CHU, P 1998, Si/CoSi₂/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy. in Proceedings: 1998 5th International Conference on Solid-State and Integrated Circuit Technology. IEEE, pp. 268-270, 1998 5th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 21/10/98. https://doi.org/10.1109/ICSICT.1998.785871

Si/CoSi₂/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy. / Qu, Xin-Ping; Ru, Guo-Ping; Li, Bing-Zong et al.
Proceedings: 1998 5th International Conference on Solid-State and Integrated Circuit Technology. IEEE, 1998. p. 268-270.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

AU - Qu, Xin-Ping

AU - Ru, Guo-Ping

AU - Li, Bing-Zong

AU - Jie-Qin, null

AU - Jiang, Zui-Min

AU - CHU, Paul

N1 - Research Unit(s) information for this publication is provided by the author(s) concerned.

PY - 1998/10

Y1 - 1998/10

N2 - A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

AB - A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

U2 - 10.1109/ICSICT.1998.785871

DO - 10.1109/ICSICT.1998.785871

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-4306-9

SP - 268

EP - 270

BT - Proceedings

PB - IEEE

T2 - 1998 5th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 21 October 1998 through 23 October 1998

ER -