Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

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Author(s)

  • Xin-Ping Qu
  • Guo-Ping Ru
  • Bing-Zong Li
  • Jie-Qin
  • Zui-Min Jiang

Related Research Unit(s)

Detail(s)

Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication1998 5th International Conference on Solid-State and Integrated Circuit Technology
PublisherIEEE
Pages268-270
ISBN (print)0-7803-4306-9
Publication statusPublished - Oct 1998

Conference

Title1998 5th International Conference on Solid-State and Integrated Circuit Technology
Location
PlaceChina
CityBeijing
Period21 - 23 October 1998

Abstract

A new approach to fabricate Si/CoSi2/Si heterostructures is presented. By incorporation of novel solid phase epitaxy with molecular beam epitaxy (MBE), an epitaxial Si/CoSi2/Si(100) double heterostructure has been grown. With Co/Ti/Si ternary solid state reaction and subsequent surface treatment, a high quality CoSi2 surface is obtained, on which a crystalline Si layer is epitaxially grown by MBE. The double epitaxial heterostructure is confirmed by Rutherford backscattering spectroscopy and transmission electron microscopy measurements.

Bibliographic Note

Research Unit(s) information for this publication is provided by the author(s) concerned.

Citation Format(s)

Si/CoSi2/Si(100) heteroepitaxial growth by molecular beam epitaxy and novel solid phase epitaxy. / Qu, Xin-Ping; Ru, Guo-Ping; Li, Bing-Zong et al.
Proceedings: 1998 5th International Conference on Solid-State and Integrated Circuit Technology. IEEE, 1998. p. 268-270.

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review