Si nanowires grown from silicon oxide
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
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Detail(s)
Original language | English |
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Pages (from-to) | 237-242 |
Journal / Publication | Chemical Physics Letters |
Volume | 299 |
Issue number | 2 |
Publication status | Published - 6 Jan 1999 |
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Abstract
Bulk-quantity Si nanowires have been synthesized by thermal evaporation of a powder mixture of silicon and SiO2. Transmission electron microscopy showed that, at the initial nucleation stage, silicon monoxide vapor was generated from the powder mixture and condensed on the substrate. Si nanoparticles were precipitated and surrounded by shells of silicon oxide. The Si nanowire nucleus consisted of a polycrystalline Si core with a high density of defects and a silicon oxide shell. The growth mechanism was proposed to be closely related to the defect structure and silicon monoxide.
Citation Format(s)
Si nanowires grown from silicon oxide. / Wang, N.; Tang, Y. H.; Zhang, Y. F. et al.
In: Chemical Physics Letters, Vol. 299, No. 2, 06.01.1999, p. 237-242.
In: Chemical Physics Letters, Vol. 299, No. 2, 06.01.1999, p. 237-242.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review