Short-circuit diffusion growth of long bi-crystal CuO nanowires

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Benjamin J. Hansen
  • Hoi-lam Iris Chan
  • Jian LU
  • Ganhua Lu
  • Junhong Chen

Detail(s)

Original languageEnglish
Pages (from-to)41-45
Journal / PublicationChemical Physics Letters
Volume504
Issue number1-3
Online published18 Jan 2011
Publication statusPublished - 28 Feb 2011

Abstract

The growth of CuO nanowires (NWs) through direct oxidation of copper is widely utilized. We give further evidence of a short-circuit, grain boundary diffusion mechanism. First, we show enhanced CuO NW growth through oxidizing nanocrystalline Cu. Second, we show the presence of a bi-crystal structure with a Cu rich (1 1 -2)/(0 0 -1) boundary along the entire length of the NW. Our analysis suggests that the growth of CuO NWs occurs via the short-circuit diffusion of Cu ions across the Cu2O layer, followed by short-circuit diffusion along the CuO NW bi-crystal grain boundary and to the NW tip, where subsequent oxidation occurs.

Research Area(s)

  • MECHANICAL ATTRITION TREATMENT, COPPER-OXIDE, OXIDATION, SURFACE, SCALE, KINETICS, FILMS, ARRAY, AIR

Citation Format(s)

Short-circuit diffusion growth of long bi-crystal CuO nanowires. / Hansen, Benjamin J.; Chan, Hoi-lam Iris; LU, Jian; Lu, Ganhua; Chen, Junhong.

In: Chemical Physics Letters, Vol. 504, No. 1-3, 28.02.2011, p. 41-45.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review