Abstract
The growth of CuO nanowires (NWs) through direct oxidation of copper is widely utilized. We give further evidence of a short-circuit, grain boundary diffusion mechanism. First, we show enhanced CuO NW growth through oxidizing nanocrystalline Cu. Second, we show the presence of a bi-crystal structure with a Cu rich (1 1 -2)/(0 0 -1) boundary along the entire length of the NW. Our analysis suggests that the growth of CuO NWs occurs via the short-circuit diffusion of Cu ions across the Cu2O layer, followed by short-circuit diffusion along the CuO NW bi-crystal grain boundary and to the NW tip, where subsequent oxidation occurs.
| Original language | English |
|---|---|
| Pages (from-to) | 41-45 |
| Journal | Chemical Physics Letters |
| Volume | 504 |
| Issue number | 1-3 |
| Online published | 18 Jan 2011 |
| DOIs | |
| Publication status | Published - 28 Feb 2011 |
Funding
The authors would like to thank Dr. Yong Ding for his technical expertise and assistance with the TEM work. This work was financially supported by the National Science Foundation through an IREE supplemental grant of CMMI-0609059 and the Hong Kong Polytechnic University funds for niche areas under grant No. BB90. BJH was supported by a National Science Foundation Graduate Research Fellowship.
Research Keywords
- MECHANICAL ATTRITION TREATMENT
- COPPER-OXIDE
- OXIDATION
- SURFACE
- SCALE
- KINETICS
- FILMS
- ARRAY
- AIR
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