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Short-circuit diffusion growth of long bi-crystal CuO nanowires

  • Benjamin J. Hansen
  • , Hoi-lam Iris Chan
  • , Jian LU
  • , Ganhua Lu
  • , Junhong Chen*
  • *Corresponding author for this work

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    Abstract

    The growth of CuO nanowires (NWs) through direct oxidation of copper is widely utilized. We give further evidence of a short-circuit, grain boundary diffusion mechanism. First, we show enhanced CuO NW growth through oxidizing nanocrystalline Cu. Second, we show the presence of a bi-crystal structure with a Cu rich (1 1 -2)/(0 0 -1) boundary along the entire length of the NW. Our analysis suggests that the growth of CuO NWs occurs via the short-circuit diffusion of Cu ions across the Cu2O layer, followed by short-circuit diffusion along the CuO NW bi-crystal grain boundary and to the NW tip, where subsequent oxidation occurs.

    Original languageEnglish
    Pages (from-to)41-45
    JournalChemical Physics Letters
    Volume504
    Issue number1-3
    Online published18 Jan 2011
    DOIs
    Publication statusPublished - 28 Feb 2011

    Funding

    The authors would like to thank Dr. Yong Ding for his technical expertise and assistance with the TEM work. This work was financially supported by the National Science Foundation through an IREE supplemental grant of CMMI-0609059 and the Hong Kong Polytechnic University funds for niche areas under grant No. BB90. BJH was supported by a National Science Foundation Graduate Research Fellowship.

    Research Keywords

    • MECHANICAL ATTRITION TREATMENT
    • COPPER-OXIDE
    • OXIDATION
    • SURFACE
    • SCALE
    • KINETICS
    • FILMS
    • ARRAY
    • AIR

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