Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

Qinggang Hou; Yixiao Huang; Jiahua Kong; Ruiling Zhang; Aleksandr A. Sergeev; Zhannan Peng; Zhenhua Sun; Jianguo Tang; Andrey L. Rogach; Zhonglin Du

doi:10.1021/acs.jpcc.5c01061

Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

Qinggang Hou, Yixiao Huang, Jiahua Kong, Ruiling Zhang, Aleksandr A. Sergeev, Zhannan Peng, Zhenhua Sun^*, Jianguo Tang, Andrey L. Rogach^*, Zhonglin Du^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

4 Citations (Scopus)

Abstract

Realization of a suitable energy band structure of core-shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn_1-xCd_xSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn_1-xCd_xSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges. © 2025 American Chemical Society.

Original language	English
Pages (from-to)	6890–6900
Journal	Journal of Physical Chemistry C
Volume	129
Issue number	14
Online published	28 Mar 2025
DOIs	https://doi.org/10.1021/acs.jpcc.5c01061
Publication status	Published - 10 Apr 2025

Funding

Z.D. is grateful for the financial support from the National Natural Science Foundation of China (Grant 51802169) and the China Postdoctoral Science Foundation Funded Project (Grant 2018M632614). J.T. was supported by the State Key Project of International Cooperation Research (2016YFE0110800, 2017YFE0108300). A.L.R. acknowledges the financial support from the Centre for Functional Photonics (City University of Hong Kong). Z.S. was supported by the Natural Science Foundation of Shenzhen (Grant JCYJ20210324095400002, JCYJ20240813142459010) and Shenzhen Science and Technology Program (Shenzhen Key Laboratory of Ultrafast Laser Micro/Nano Manufacturing ZDSYS20220606100405013).

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COPYRIGHT TERMS OF DEPOSITED POSTPRINT FILE: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of Physical Chemistry C, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.jpcc.5c01061.

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@article{a98763282ef74cf995042958ed9044cc,

title = "Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots",

abstract = "Realization of a suitable energy band structure of core-shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn1-xCdxSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn1-xCdxSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges. {\textcopyright} 2025 American Chemical Society.",

author = "Qinggang Hou and Yixiao Huang and Jiahua Kong and Ruiling Zhang and Sergeev, {Aleksandr A.} and Zhannan Peng and Zhenhua Sun and Jianguo Tang and Rogach, {Andrey L.} and Zhonglin Du",

year = "2025",

month = apr,

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doi = "10.1021/acs.jpcc.5c01061",

language = "English",

volume = "129",

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TY - JOUR

T1 - Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

AU - Hou, Qinggang

AU - Huang, Yixiao

AU - Kong, Jiahua

AU - Zhang, Ruiling

AU - Sergeev, Aleksandr A.

AU - Peng, Zhannan

AU - Sun, Zhenhua

AU - Tang, Jianguo

AU - Rogach, Andrey L.

AU - Du, Zhonglin

PY - 2025/4/10

Y1 - 2025/4/10

N2 - Realization of a suitable energy band structure of core-shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn1-xCdxSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn1-xCdxSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges. © 2025 American Chemical Society.

AB - Realization of a suitable energy band structure of core-shell-structured indium phosphide (InP)-based quantum dots (QDs) is crucial for their anticipated use in various optoelectronic devices. In this study, we demonstrate how to achieve the optimal band alignment and defect engineering of InP core/Zn1-xCdxSe shell QDs by systematically varying the shell composition. Using advanced spectroscopic techniques, we show how the alloyed Zn1-xCdxSe shell reduces surface defects while simultaneously tuning the charge carrier wave functions from localization to delocalization mode due to the band alignment shift from type-I to quasi-type-II. These InP-based core/shell QDs also exhibit outstanding stability under high-energy ultraviolet irradiation and thermal treatment, as well as long-term storage stability, which is essential for device applications. Furthermore, studies using floating gate transistors based on InP-based core/shell QDs demonstrate the synergistic influence of the energy band structure and defects on charge injection and the spontaneous recovery of the trapped charges. © 2025 American Chemical Society.

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U2 - 10.1021/acs.jpcc.5c01061

DO - 10.1021/acs.jpcc.5c01061

M3 - RGC 21 - Publication in refereed journal

SN - 1932-7447

VL - 129

SP - 6890

EP - 6900

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 14

ER -

Shell Composition-Mediated Band Alignment and Defect Engineering in Indium Phosphide-Based Core/Shell Quantum Dots

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