Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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  • Y. H. Ku
  • S. K. Lee
  • D. L. Kwong
  • P. Chu


Original languageEnglish
Pages (from-to)1684-1686
Journal / PublicationApplied Physics Letters
Issue number17
Publication statusPublished - 1989
Externally publishedYes


Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive-in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O 3. p+/n diodes and short-channel metal-oxide-semiconductor field-effect transistors with good electrical characteristics have been fabricated using doped silicide technology.

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