Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

M. Eizenberg; H. Föll; K. N. Tu

doi:10.1063/1.91981

Shallow silicide contacts formed by using codeposited Pt₂Si and Pt_1.2Si films

M. Eizenberg
, H. Föll
, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

16 Citations (Scopus)

Abstract

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt₂Si and Pt_1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

Original language	English
Pages (from-to)	547-549
Journal	Applied Physics Letters
Volume	37
Issue number	6
DOIs	https://doi.org/10.1063/1.91981
Publication status	Published - 1980
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{077c25bb35f248dab61174bec02cdc8b,

title = "Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films",

abstract = "We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.",

author = "M. Eizenberg and H. F{\"o}ll and Tu, \{K. N.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1980",

doi = "10.1063/1.91981",

language = "English",

volume = "37",

pages = "547--549",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

AU - Eizenberg, M.

AU - Föll, H.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1980

Y1 - 1980

N2 - We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

AB - We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

UR - https://www.scopus.com/pages/publications/0042521276

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0042521276&origin=recordpage

U2 - 10.1063/1.91981

DO - 10.1063/1.91981

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 37

SP - 547

EP - 549

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -