Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)547-549
Journal / PublicationApplied Physics Letters
Volume37
Issue number6
Publication statusPublished - 1980
Externally publishedYes

Abstract

We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.

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