Shallow silicide contact
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 1663-1668 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 51 |
| Issue number | 3 |
| Publication status | Published - 1980 |
| Externally published | Yes |
Link(s)
Abstract
Device miniaturization requires dimensional shrinkage not only in the lateral directions but also in the vertical direction. A silicide contact in a shallow junction Si device has to be shallow, which means that in forming the silicide it may not consume more than a few hundred angstroms of Si from the substrate. A general scheme of making such a shallow silicide contact is reported here. The scheme utilizes the effect of alloying to dilute the contact reaction, and it produces a shallow contact and a protective diffusion barrier at the same time. Results of Pt-Cr alloys are presented for illustration.
Bibliographic Note
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Citation Format(s)
Shallow silicide contact. / Tu, K. N.; Hammer, W. N.; Olowolafe, J. O.
In: Journal of Applied Physics, Vol. 51, No. 3, 1980, p. 1663-1668.
In: Journal of Applied Physics, Vol. 51, No. 3, 1980, p. 1663-1668.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
