Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

Author(s)

Title	3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
Place	China
City	Kunming
Period	7 - 11 November 1994

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Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(180efee9-71bf-4108-ae2b-24c593351e6b).html

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Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source. / Fang, Hua ; Li, Bing-Zong; Shao, Kai et al.
1994. 347-350 Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China.

Research output: Conference Papers › RGC 32 - Refereed conference paper (without host publication) › peer-review

Fang, H, Li, B-Z, Shao, K, Gu, Z-G, Huang, W-N, Jiang, G-B, Liu, P, Zhou, Z-Y & Chu, PK 1994, 'Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source', Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China, 7/11/94 - 11/11/94 pp. 347-350.

Fang, H., Li, B.-Z., Shao, K., Gu, Z.-G., Huang, W.-N., Jiang, G.-B., Liu, P., Zhou, Z.-Y., & Chu, P. K. (1994). Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source. 347-350. Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China.

Fang H, Li BZ, Shao K, Gu ZG, Huang WN, Jiang GB et al.. Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source. 1994. Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China.

Fang, Hua ; Li, Bing-Zong ; Shao, Kai et al. / Shallow Junction Formation by Epitaxial Cobalt Silicide as Diffusion Source. Paper presented at 3rd International Conference on Materials and Process Characterization for VLSI (ICMPC '94)
, Kunming , China.