Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 3439-3444 |
| Journal / Publication | Journal of Applied Physics |
| Volume | 56 |
| Issue number | 12 |
| Publication status | Published - 1984 |
| Externally published | Yes |
Link(s)
Abstract
Solid-state reactions between bilayer thin films of vanadium and amorphous silicon with an excess amount of vanadium have been studied by Rutherford backscattering spectroscopy and Seemann-Bohlin x-ray diffraction. In prior studies of the interaction between vanadium thin films and single-crystal silicon, VSi2 has been the only compound observed. In the present study a sequence of compounds was observed. The first silicide, VSi2, was observed to form at 475 °C. At higher temperatures the compounds V 5Si3 and V3Si formed in sequence. The growth of VSi2 is linear in time with an activation energy of 2.3±0.4 eV. The growth of V5Si3 is also linear with an activation energy of 2.5±0.1 eV.
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Citation Format(s)
Sequential silicide formation between vanadium and amorphous silicon thin-film bilayers. / Psaras, P. A.; Eizenberg, M.; Tu, K. N.
In: Journal of Applied Physics, Vol. 56, No. 12, 1984, p. 3439-3444.
In: Journal of Applied Physics, Vol. 56, No. 12, 1984, p. 3439-3444.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
