Sensitivity and stability of porous polycrystalline silicon gas sensor

P. G. Han; H. Wong; M. C. Poon

doi:10.1016/S0927-7757(00)00653-1

Sensitivity and stability of porous polycrystalline silicon gas sensor

P. G. Han^*
, H. Wong
, M. C. Poon

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

40 Citations (Scopus)

Abstract

Porous silicon (PS) used as a sensing material for micro-sensors has attracted a lot of attention in recent years. Owing to the large surface area (∼200 m² cm^-3) and high chemical activity, porous silicon would be a good choice for gas sensor applications. In this paper, a resistivity sensor using porous polycrystalline silicon (PPS) thin films was fabricated by anodization and standard lithographic technique. Analytical measurements on the sample reveal that these sensing porous poly-Si films consist of many pores with a diameter of ∼100 nm. A high sensitivity to ambient pressure and ethanol vapor was observed. The sensitivity and stability of PPS gas sensor have been characterized and analyzed as a function of gas concentration and storing duration. In particular, we will discuss the mechanism of the interaction between the surface state of PPS and ambient gases in detail. Suggestions to further improve the sensor stability will also be proposed. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	171-175
Journal	Colloids and Surfaces A: Physicochemical and Engineering Aspects
Volume	179
Issue number	2-3
Online published	22 Dec 2000
DOIs	https://doi.org/10.1016/S0927-7757(00)00653-1
Publication status	Published - 30 Jan 2001

Research Keywords

Gas sensor
Porous polysilicon
Sensitivity

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title = "Sensitivity and stability of porous polycrystalline silicon gas sensor",

abstract = "Porous silicon (PS) used as a sensing material for micro-sensors has attracted a lot of attention in recent years. Owing to the large surface area (∼200 m2 cm-3) and high chemical activity, porous silicon would be a good choice for gas sensor applications. In this paper, a resistivity sensor using porous polycrystalline silicon (PPS) thin films was fabricated by anodization and standard lithographic technique. Analytical measurements on the sample reveal that these sensing porous poly-Si films consist of many pores with a diameter of ∼100 nm. A high sensitivity to ambient pressure and ethanol vapor was observed. The sensitivity and stability of PPS gas sensor have been characterized and analyzed as a function of gas concentration and storing duration. In particular, we will discuss the mechanism of the interaction between the surface state of PPS and ambient gases in detail. Suggestions to further improve the sensor stability will also be proposed. {\textcopyright} 2001 Elsevier Science B.V.",

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TY - JOUR

T1 - Sensitivity and stability of porous polycrystalline silicon gas sensor

AU - Han, P. G.

AU - Wong, H.

AU - Poon, M. C.

PY - 2001/1/30

Y1 - 2001/1/30

N2 - Porous silicon (PS) used as a sensing material for micro-sensors has attracted a lot of attention in recent years. Owing to the large surface area (∼200 m2 cm-3) and high chemical activity, porous silicon would be a good choice for gas sensor applications. In this paper, a resistivity sensor using porous polycrystalline silicon (PPS) thin films was fabricated by anodization and standard lithographic technique. Analytical measurements on the sample reveal that these sensing porous poly-Si films consist of many pores with a diameter of ∼100 nm. A high sensitivity to ambient pressure and ethanol vapor was observed. The sensitivity and stability of PPS gas sensor have been characterized and analyzed as a function of gas concentration and storing duration. In particular, we will discuss the mechanism of the interaction between the surface state of PPS and ambient gases in detail. Suggestions to further improve the sensor stability will also be proposed. © 2001 Elsevier Science B.V.

AB - Porous silicon (PS) used as a sensing material for micro-sensors has attracted a lot of attention in recent years. Owing to the large surface area (∼200 m2 cm-3) and high chemical activity, porous silicon would be a good choice for gas sensor applications. In this paper, a resistivity sensor using porous polycrystalline silicon (PPS) thin films was fabricated by anodization and standard lithographic technique. Analytical measurements on the sample reveal that these sensing porous poly-Si films consist of many pores with a diameter of ∼100 nm. A high sensitivity to ambient pressure and ethanol vapor was observed. The sensitivity and stability of PPS gas sensor have been characterized and analyzed as a function of gas concentration and storing duration. In particular, we will discuss the mechanism of the interaction between the surface state of PPS and ambient gases in detail. Suggestions to further improve the sensor stability will also be proposed. © 2001 Elsevier Science B.V.

KW - Gas sensor

KW - Porous polysilicon

KW - Sensitivity

UR - https://www.scopus.com/pages/publications/0035971003

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U2 - 10.1016/S0927-7757(00)00653-1

DO - 10.1016/S0927-7757(00)00653-1

M3 - RGC 21 - Publication in refereed journal

SN - 0927-7757

VL - 179

SP - 171

EP - 175

JO - Colloids and Surfaces A: Physicochemical and Engineering Aspects

JF - Colloids and Surfaces A: Physicochemical and Engineering Aspects

IS - 2-3

ER -

Sensitivity and stability of porous polycrystalline silicon gas sensor

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