Semi-insulating behavior of Cu doped InP

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

1 Scopus Citations
Scopus Metrics
View graph of relations

Author(s)

  • R. Leon
  • M. Kaminska
  • Z. Liliental-Weber
  • M. Chandramouli
  • E. R. Weber

Detail(s)

Original languageEnglish
Title of host publication[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Pages464-467
ISBN (print)0879426268
Publication statusPublished - Apr 1991
Externally publishedYes

Conference

TitleThird International Conference on Indium Phosphide and Related Materials
PlaceUnited Kingdom
CityCardiff, Wales
Period8 - 11 April 1991

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0026407699&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(5b420125-fd33-473e-b9f4-ce0a1fcf6958).html

Abstract

Results from electrical measurements, as well as lattice site determination, structural, and X-ray energy dispersive studies of Cu doping of InP, are presented. Hall measurements of carrier concentration as a function of inverse temperature show that InP:Cu exhibits semi-insulating behavior after diffusion with Cu at temperatures exceeding 700°C. Similar measurements of carrier concentration and mobility show that samples exhibited properties typical of hopping conductivity when diffused at temperatures below 700°C. Particle induced X-ray emission (PIXE) performed with channeling in the <110>, <100>, and <111> directions shows a random distribution of Cu, which is typically seen when precipitates are present. Transmission electron microscopy (TEM) indicates the presence of numerous small spherical crystalline precipitates in the samples, and microdiffraction and energy dispersion spectroscopy (EDS) analysis indicates that the most probable phase of these precipitates is InxCu.

Fingerprint

Publication fingerprints text

100
Carrier Concentrati... Engineering
100
X Ray Physics
50
Channelling Engineering
50
Ray Emission Engineering
50
Lattice Site Engineering
50
Statistical Distrib... Engineering
50
Dispersion Energy Engineering
50
Electrical Measurem... Engineering
50
Carrier Mobility Engineering
50
Transmission Electr... Material Science
Full Fingerprint ›

Citation Format(s)

[ RIS ] [ BibTeX ]
Semi-insulating behavior of Cu doped InP. / Leon, R.; Kaminska, M.; Liliental-Weber, Z. et al.
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers, Inc., 1991. p. 464-467.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review