Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE

Keiro Komatsu; Shotaro Kitamura; Tomoaki Kato; Masayuki Yamaguchi; Shinji Takano; Haruhito Shimizu; Nobutaka Watanabe; Kazuhiro Kosuge; Mitsuhiro Kitamura

Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE

Keiro Komatsu
, Shotaro Kitamura
, Tomoaki Kato
, Masayuki Yamaguchi
, Shinji Takano
, Haruhito Shimizu
, Nobutaka Watanabe
, Kazuhiro Kosuge
, Mitsuhiro Kitamura

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.

Original language	English
Pages (from-to)	241-250
Journal	Optoelectronics - Devices and Technologies
Volume	9
Issue number	2
Publication status	Published - Jun 1994
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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@article{4e1d38ce117e4596a2adda70d77577a8,

title = "Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE",

abstract = "External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.",

author = "Keiro Komatsu and Shotaro Kitamura and Tomoaki Kato and Masayuki Yamaguchi and Shinji Takano and Haruhito Shimizu and Nobutaka Watanabe and Kazuhiro Kosuge and Mitsuhiro Kitamura",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "1994",

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language = "English",

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TY - JOUR

T1 - Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE

AU - Komatsu, Keiro

AU - Kitamura, Shotaro

AU - Kato, Tomoaki

AU - Yamaguchi, Masayuki

AU - Takano, Shinji

AU - Shimizu, Haruhito

AU - Watanabe, Nobutaka

AU - Kosuge, Kazuhiro

AU - Kitamura, Mitsuhiro

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1994/6

Y1 - 1994/6

N2 - External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.

AB - External modulators, which have smaller chirping characteristics than laser diode direct modulation, are desired for high-speed and long-distance optical fiber communication systems. We have developed InGaAsP/InP buried-hetero Franz-Keldysh type optical modulators suitable for practical use in 1.55 μm-2.5 Gb/s long-haul optical transmission systems. A novel fabrication method using the selective growth technique by metal-organic vapor phase epitaxy was implemented for the modulator fabrication. Since semiconductor etching is no longer required for narrow mesa stripe fabrication, the selective growth technique provides a simple fabrication process with highly accurate device dimension control. The fabricated modulators have been packaged, and fiber-pigtailed modulators with 8.1 dB fiber-to-fiber insertion loss, more than 13.4 dB extinction ratio at 3 V, and 3.7 GHz modulation bandwidth have been achieved. Normal fiber 120 km transmission at 2.5 Gb/s signal speed and 1.55 μm wavelength with power penalty less than 0.9 dB, using the packaged modulator, has been demonstrated. Moreover, excellent device reproducibility has been experimentally confirmed and a preliminary reliability check has been carried out.

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M3 - RGC 21 - Publication in refereed journal

SN - 0912-5434

VL - 9

SP - 241

EP - 250

JO - Optoelectronics - Devices and Technologies

JF - Optoelectronics - Devices and Technologies

IS - 2

ER -

Semiconductor external modulators for 2.5 Gb/s optical transmission using selective growth by MOVPE

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