Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

21 Scopus Citations
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Author(s)

  • Jose Ramon Duran Retamal
  • Chin-Hsiang Ho
  • Kun-Tong Tsai
  • Jr-Jian Ke
  • Jr-Hau He

Detail(s)

Original languageEnglish
Article number8599128
Pages (from-to)938-943
Journal / PublicationIEEE Transactions on Electron Devices
Volume66
Issue number2
Online published1 Jan 2019
Publication statusPublished - Feb 2019
Externally publishedYes

Abstract

Resistive random access memory (ReRAM), a new emerging nonvolatile memory technology based on changes in electrical resistivity of a dielectric film, offers promising advantages such as scalability, fast switching, and low operation voltage. However, for ReRAM to become a successful technology, it is necessary to accurately control the stochastic nature of the conductive nanoscale filaments (CNFs) that governs the resistive switching (RS) behavior of the device and limits its long-term stability and reliability. In this paper, we developed a highly scalable nanostructured/textured electrode that is composed of an array of Al nanotips based on an anodic aluminum oxide template. The nanotips improve the RS characteristics by intensifying the electric field at the apex of each nanotip which is demonstrated using numerical simulations. The localized electric field induces the repetitive nucleation/ formation/rupture of the CNFs in a more controlled fashion compared to a flat Al electrode. As a result, the nanotip sample exhibits uniform and reduced forming/reset voltages as low as 4.70 ± 0.98V/1.00 ± 0.19 V, stable endurance, and long-term retention. As a result, we were able to achieve ultralow-power and error-free operation of 100 cells covering a large area, significantly demonstrating improved uniformity and reliability compared to devices made using flat Al electrodes. This universal bottom-up strategy of self-organized nanostructured-electrodes provides a pathway toward large-scale, highly reliable, and RS memory devices.

Research Area(s)

  • Anodic aluminum oxide (AAO), field enhancement, nanostructured materials, nanotip, resistive random access memory (ReRAM), surface texturing

Citation Format(s)

Self-Organized Al Nanotip Electrodes for Achieving Ultralow-Power and Error-Free Memory. / Duran Retamal, Jose Ramon; Ho, Chin-Hsiang; Tsai, Kun-Tong; Ke, Jr-Jian; He, Jr-Hau.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 2, 8599128, 02.2019, p. 938-943.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review