Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Woon Ik Park
  • Jong Moon Yoon
  • Moonkyu Park
  • Jinsup Lee
  • Sung Kyu Kim
  • Jae Won Jeong
  • Kyungho Kim
  • Hu Young Jeong
  • Kwang Soo No
  • Jeong Yong Lee
  • Yeon Sik Jung

Detail(s)

Original languageEnglish
Pages (from-to)1235-1240
Journal / PublicationNano Letters
Volume12
Issue number3
Online published10 Feb 2012
Publication statusPublished - 14 Mar 2012
Externally publishedYes

Abstract

Figure Persented: We report the direct formation of ordered memristor nanostructures on metal and graphene electrodes by a block copolymer self-assembly process. Optimized surface functionalization provides stacking structures of Si-containing block copolymer thin films to generate uniform memristor device structures. Both the silicon oxide film and nanodot memristors, which were formed by the plasma oxidation of the self-assembled block copolymer thin films, presented unipolar switching behaviors with appropriate set and reset voltages for resistive memory applications. This approach offers a very convenient pathway to fabricate ultrahigh-density resistive memory devices without relying on high-cost lithography and pattern-transfer processes.

Research Area(s)

  • Block copolymer, graphene, nanodot, Pt, resistive memory, self-assembly

Citation Format(s)

Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes. / Park, Woon Ik; Yoon, Jong Moon; Park, Moonkyu; Lee, Jinsup; Kim, Sung Kyu; Jeong, Jae Won; Kim, Kyungho; Jeong, Hu Young; Jeon, Seokwoo; No, Kwang Soo; Lee, Jeong Yong; Jung, Yeon Sik.

In: Nano Letters, Vol. 12, No. 3, 14.03.2012, p. 1235-1240.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review