Self-assembled monolayer modifications of organic thin film transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Author(s)

  • Ivan Shuvalov
  • Rhys Lawson
  • Hong Ma
  • Alex Jen
  • Larry Dalton

Detail(s)

Original languageEnglish
Article number71
Pages (from-to)437-442
Journal / PublicationProceedings of SPIE - The International Society for Optical Engineering
Volume5592
Publication statusPublished - 2005
Externally publishedYes

Conference

TitleNanofabrication: Technologies, Devices, and Applications
PlaceUnited States
CityPhiladelphia, PA
Period25 - 28 October 2004

Abstract

Future generations of flexible, transparent electronics will require the use of polymer based thin-film transistors (TFTs) exhibiting high carrier mobility. The problem of enhancing TFT characteristics is addressed in this report. We investigate the nanoscale, self-assembled monolayer (SAM) influence on organic-based thin film transistors (OTFT) at the interface between semiconducting polymer and both the source/drain metal contacts and the insulator. Capacitance-voltage (C-V) characteristics help to elucidate the role of SAMs in the OTFT structure and the charge injection mechanism. Positive trends and parasitic effects are also addressed in characterization.

Research Area(s)

  • Carrier mobility, Organic thin-film transistors, Polythiophene, Self-assembled monolayers